TITLE

Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers

AUTHOR(S)
Zhang, N.; Chen, Y.; Zhang, Y.; Dudley, M.; Stahlbush, R. E.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A model is presented for the formation mechanism of dislocation half-loop arrays formed during the homoepitaxial growth of 4H-SiC. The reorientation during glide of originally screw oriented threading segments of basal plane dislocation (BPD) renders them susceptible to conversion into sessile threading edge dislocations (TEDs), which subsequently pin the motion of the BPD. Continued glide during further growth enables parts of the mobile BPD to escape through the surface leaving arrays of half loops comprising two TEDs and a short BPD segment with significant edge component. The faulting behavior of the arrays under UV excitation is consistent with this model.
ACCESSION #
37259568

 

Related Articles

  • The mechanism of micropipe nucleation at inclusions in silicon carbide. Dudley, M.; Huang, X.R. // Applied Physics Letters;8/9/1999, Vol. 75 Issue 6, p784 

    Presents a model for a possible mechanism of screw dislocation nucleation in silicon carbide. Model based on the observation of micropipe nucleation at the sites of foreign material inclusions using synchroton white beam x-ray topography; Incorporation of the inclusion into the growing crystal.

  • In-situ transmission electron microscopy of partial-dislocation glide in 4H-SiC under electron radiation. Ohno, Yutaka; Yonenaga, Ichiro; Miyao, Kotaro; Maeda, Koji; Tsuchida, Hidekazu // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p042102 

    Electron-radiation-enhanced glide of 30°-Si(g) partial dislocations bringing about an expansion/shrinkage of Shockley-type stacking faults in 4H-SiC was observed in-situ by transmission electron microscopy. Geometrical kinks on 30°-Si(g) partials did not migrate in the dark, indicating...

  • Dislocation nucleation at amorphous intergrain boundaries in deformed nanoceramics. Bobylev, S. V.; Ovid'ko, I. A. // Physics of the Solid State;Apr2008, Vol. 50 Issue 4, p642 

    A theoretical model is proposed for lattice dislocation nucleation in deformed nanocrystalline ceramics with amorphous intergrain boundaries. According to the model, a lattice dislocation dipole nucleates at an amorphous intergrain boundary through a local plastic shear along the boundary cross...

  • Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level.... Fissel, Andreas; Kaiser, Ute // Applied Physics Letters;2/26/1996, Vol. 68 Issue 9, p1204 

    Investigates the epitaxial growth of hydrogen (H)-silicon carbide (SiC) semiconductors on H-SiC(0001) via two-dimensional nucleation. Application of molecular beam epitaxy; Control of deposition to an atomic level by surface superstructures; Result of deviations from the monolayer deposition...

  • Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structure. Fox, Bradley A.; Jesser, William A. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2739 

    Investigates the asymmetry in the dislocation morphology in epitaxial layers with zinc-blende structure. Effect of misorientation on the resolved shear stress for each slip system; Nucleation barrier differences between the two types of dislocations; Use of x-ray topography.

  • Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures. Liu, R.; Mei, J.; Srinivasan, S.; Ponce, F. A.; Omiya, H.; Narukawa, Y.; Mukai, T. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p201911 

    The authors have observed that for InxGa1-xN epitaxial layers grown on bulk GaN substrates exhibit slip on the basal plane, when in the presence of free surfaces that intercept the heterointerface and for indium compositions x>=0.07. This leads to almost complete relaxation of the local misfit...

  • Dislocations as a source of micropipe development in the growth of silicon carbide. Cherednichenko, D. I.; Khlebnikov, Y. I.; Khlebnikov, I. I.; Drachev, R. V.; Sudarshan, T. S. // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    Micropipes are the primary macroscopic defects in silicon carbide single crystals. It is shown that a stable hollow core of dislocation can act as an initial site of micropipe development. The specific strain energy necessary to estimate the thermodynamic stability of a hollow dislocation core...

  • Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC. Lebedev, A. A.; Davydov, D. V.; Tregubova, A. S.; Bogdanova, E. V.; Shcheglov, M. P.; Pavlenko, M. V. // Semiconductors;Dec2001, Vol. 35 Issue 12, p1372 

    Spectra of deep centers in a lightly doped 6H-SiC substrate having regions with different degrees of structural perfection were investigated. It is found that the concentrations of the majority of deep centers are independent of the dislocation density in a given region of the sample. The...

  • Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes. Ha, S.; Skowronski, M.; Lendenmann, H. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p393 

    The morphology and nucleation sites of stacking faults formed during the forward operation of 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy (OEM) and transmission electron microscopy (TEM). Partial dislocations bounding the stacking faults are mostly aligned...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics