Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Zhou, Lin; Cullen, David A.; Smith, David J.; McCartney, Martha R.; Mouti, Anas; Gonschorek, M.; Feltin, E.; Carlin, J. F.; Grandjean, N.
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p121909
Academic Journal
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1×1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85In0.15N layer was uniform and that Al0.85In0.15N/AlN and AlN/GaN interfaces were abrupt and well defined.


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