Direct imaging of GaN p-n junction by cross-sectional scanning photoelectron microscopy and spectroscopy

Kuo, Cheng-Tai; Lee, Hong-Mao; Shiu, Hung-Wei; Chen, Chia-Hao; Gwo, Shangjr
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122110
Academic Journal
We demonstrate that formation of p-n junction in gallium nitride (GaN) can be directly visualized on cleavage surfaces in a cross-sectional geometry, where the focused synchrotron radiation (soft x-ray) images the different doping layers on the nonpolar a-plane surface perpendicular to the polar growth direction. In contrast to the as-grown GaN polar surface, the in situ cleaved GaN a-plane surface is shown by using photoelectron spectroscopy to be under the flatband conditions. This unique surface property opens up the way to image and identify p-n junctions in III-nitride semiconductors.


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