High piezoelectricity of Pb(Zr,Ti)O3-based ternary compound thin films on silicon substrates

Zhang, Tao; Wasa, Kiyotaka; Shu-yi Zhang; Chen, Zhao-jiang; Zhou, Feng-mei; Zhang, Zhong-ning; Yang, Yue-tao
March 2009
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122909
Academic Journal
Pb(Zr,Ti)O3 (PZT)-based ternary compound thin films, 0.06PMnN-0.94PZT(50/50) (PMnN-PZT), are deposited on Si-based heterostructures by rf magnetron sputtering system. The intrinsic PZT(50/50) thin films are also deposited on the same kind of substrates for comparison. The PMnN-PZT thin films show the similar polycrystalline structures as those of PZT with highly (111) oriented perovskite phase. The PMnN-PZT thin films show excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films prepared with the same deposition conditions. Besides, the cantilevers of PMnN-PZT thin films on the heterostructure substrates also exhibit higher sensitivities than the PZT thin film cantilevers.


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