TITLE

Micro-organic single crystalline phototransistors of 7,7,8,8-tetracyanoquinodimethane and tetrathiafulvalene

AUTHOR(S)
Hui Jiang; Xianjin Yang; Zhenduo Cui; Yongchang Liu; Hongxiang Li; Wenping Hu
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Classical p-type and n-type organic single crystals, tetrathiafulvalene (TTF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ), are introduced to investigate photoswitch and phototransistor. High photoresponsivity, low persistent conductivity, and response reversibility can be found in single crystalline TCNQ, while TTF has large persistent conductivity when the light is switched on and off. It is probably attributed to different band gaps and the compactness of molecular packing. Single crystalline TCNQ combines light detection, switching, signal amplification in a single device and realization of multiple functions which exhibit a very promising potential for the fabrication of organic photoelectric devices.
ACCESSION #
37259537

 

Related Articles

  • Electrical and optical response of a very high frequency AlGaAs/GaAs heterojunction bipolar transistor. Martin, M. Z.; Oshita, F. K.; Matloubian, M.; Fetterman, H. R.; Ho, W. J.; Wang, N. L.; Chang, F.; Cheung, D. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3847 

    Reports on the measurement of the current gain cutoff frequency of very high frequency AlGaAs/GaAs heterojunction bipolar transistors using the picosecond optoelectronic technique. Devices tested; Expression for the total transit time of the carriers from the emitter to the collector.

  • Thermal conductivity of YbInCu[sub 4]. Smirnov, I. A.; Parfen’eva, L. S.; Jezowski, A.; Misiorek, H.; Krempel-Hesse, S.; Ritter, F.; Assmus, W. // Physics of the Solid State;Sep99, Vol. 41 Issue 9, p1418 

    The electrical and thermal conductivities of an YbInCu[sub 4] polycrystalline sample have been measured within the 4.2-300-K range. The behavior of the heat conductivity has been found to change sharply above and below T[sub v] = 70-75 K, the temperature corresponding to an isostructural phase...

  • Thermostimulated impurity conduction in characterization of electrodeposited Cu2O films. Rakhshani, A. E. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2290 

    Presents information on a study which proposed a novel thermostimulated conductivity (TSC) model to include the effect of impurity conduction. Deposition of polycrystalline films of cuprous oxide on stainless steel foils; Conductivity and TSC measurements carried out; Measurement of the...

  • Characterization of arsenic doping profile across the polycrystalline Si/Si interface in.... Macaulay, J.M.; Hull, R.; Jalali, B.; Magee, C. // Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1258 

    Characterizes arsenic (As) doping profile across the polycrystalline Si/Si interface in polycrystalline silicon emitter bipolar transistors. Effect on the combination of Z-contrast scanning transmission; Coincidence of polycrystalline Si/Si crystallographic interface with the measurement of As...

  • 1/f noise in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar transistors. Hoque, Md Mazhar Ul; Celik-Butler, Zeynep; Trogolo, Joe; Weiser, Douglas; Green, Keith // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084501 

    The origin of 1/f fluctuations in positive-negative-positive (PNP) polycrystalline silicon-emitter bipolar-junction transistors is described. The interfacial oxide (IFO) at the monosilicon–polycrystalline silicon interface is found to significantly affect the noise behavior. The...

  • An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations. Wolstenholme, G. R.; Jorgensen, N.; Ashburn, P.; Booker, G. R. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p225 

    Presents a study which investigated the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors. Types of polysilicon emitter bipolar transistor; Characteristics of an amorphous material; Interpretation of the electrical results.

  • High carrier injection for all-silicon laser. Toufik, H.; Tazibt, W.; Toufik, N.; El Tahchi, M.; Pélanchon, F.; Mialhe, P. // European Physical Journal - Applied Physics;Apr2012, Vol. 58 Issue 1, pN.PAG 

    This work provides a novel approach for enhanced radiative transitions in silicon microelectronics devices. A process based on hot carrier injection is monitored for the creation of a low dimensions defect layer near the emitter-base interface of bipolar transistors. New energy levels are...

  • Influence of a methane atmosphere on the temperature dependence of the conductivity of polycrystalline silicon films. Shabanov, V. N.; Shengurov, D. V. // Technical Physics Letters;May98, Vol. 24 Issue 5, p377 

    The possibility of using polycrystalline silicon films in gas sensors is investigated. An analysis is made of the influence of a small quantity of methane admitted into the surrounding medium on the temperature dependence of the layer resistivity of films doped with acceptor impurities. It is...

  • Hopping conduction in polycrystalline semiconductors. Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2026 

    Reports on the measurements of direct current conductivity for polycrystalline semiconductors, indium antimony, cadmium telluride and silicon, in the temperature range 77-300 K. Features of polycrystalline semiconductors; Parameters which governed the electronic conduction in polycrystalline...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics