TITLE

Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays

AUTHOR(S)
Mazur, Yu. I.; Dorogan, V. G.; Marega Jr., E.; Tarasov, G. G.; Cesar, D. F.; Lopez-Richard, V.; Marques, G. E.; Salamo, G. J.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p123112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interdot coupling in (In,Ga)As/GaAs quantum dot arrays is studied by means of steady state and time-resolved photoluminescence (PL). A peculiar dependence of the PL decay time on the excitation and detection energy is revealed and ascribed to the peculiarities of the carrier and energy relaxation caused by both immediate electronic interdot coupling and long-range coupling through the radiation field.
ACCESSION #
37259532

 

Related Articles

  • Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation. Cornet, C.; Labbé, C.; Folliot, H.; Caroff, P.; Levallois, C.; Dehaese, O.; Even, J.; Le Corre, A.; Loualiche, S. // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p171502 

    We have performed time-resolved resonant pump-probe experiment to study the dynamic response of InAs/InP quantum dot transitions. A 72-stacked InAs/InP quantum dot layer sample is grown on (311)B substrate. Photoluminescence at high excitation power reveals ground and excited transitions....

  • Different responses of localized and extended excitons to exciton-exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra. Lan, Sheng; Nishikawa, Satoshi; Wada, Osamu; Akahane, Kouichi; Okada, Yoshitaka; Kawabe, Mitsuo // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6171 

    Excitation density-dependent photoluminescence excitation (PLE) measurements are performed for a disordered two-dimensional (2D) In[sub 0.40]Ga[sub 0.60]As/GaAs(311)B quantum dot superlattice (QDSL) containing localized and extended states separated by a mobility edge. For low excitation...

  • Emission of Self-Assembled CdTe/ZnTe Quantum Dot Samples with Different Cap Thickness. Nowak, S.; Jakubczyk, T.; Goryca, M.; Ciosmak, P.; Golnik, A.; Kossacki, P.; Wojnar, P.; Gaj, J. A. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p890 

    Photoluminescence measurements on CdTe/ZeTe self-assembled quantum dot samples with different cap thickness values (18-110nm) were performed at 1.8 K at varying excitation levels. The shape of macrophotoluminescence spectra did not altered notably with the excitation power. The spectra exhibited...

  • Miniband formation in InGaAs quantum dot superlattice. Sugaya, Takeyoshi; Amano, Takeru; Mori, Masahiko; Niki, Shigeru // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043112 

    We report the formation of a miniband in a quantum dot (QD) superlattice with 20-stack InGaAs QD layers, which we confirmed by the excitation power dependence in photoluminescence (PL) measurements. The PL peak of a QD superlattice shifts to a shorter wavelength as the excitation power is...

  • Single quantum dots emit single photons at a time: Antibunching experiments. Zwiller, Valéry; Blom, Hans; Jonsson, Per; Panev, Nikolay; Jeppesen, So¨ren; Tsegaye, Tedros; Goobar, Edgard; Pistol, Mats-Erik; Samuelson, Lars; Bjo¨rk, Gunnar // Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2476 

    We have studied the photoluminescence correlation from a single InAs/GaAs self-assembled Stranski-Krastanow quantum dot under continuous, as well as under pulsed excitation. Under weak continuous excitation, where the single dot luminescence is due primarily to single exciton recombinations,...

  • High-temperature light emission from InAs quantum dots. Patane, A.; Polimeni, A. // Applied Physics Letters;8/9/1999, Vol. 75 Issue 6, p814 

    Studies the photoluminescence (PL) properties from self-assembled quantum dots. Use of power excitation densities to identify the contribution of nonradiative channels; Role played by the wetting layer on the dot PL intensity.

  • Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer. Hongbin Yang; Zhensheng Tao; Jianhui Lin; Fang Lu; Zuimin Jiang; Zhenyang Zhong // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p111907 

    The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show...

  • Phonon Effects on the Weak Measurement of Charge States in Quantum Dots with a Quantum Point Contact. Marcinowski, Ł.; Krzyzosiak, M.; Roszak, K.; Machnikowski, P.; Buczko, R.; Mostowski, J. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p640 

    We study theoretically the process of a weak measurement of charge states in a double quantum dot performed by coupling to a quantum point contact. We focus on the interplay of the measurement process with phonon-induced dephasing of delocalized superpositions of electron states and compare the...

  • Nanodevice for High Precision Readout of Electron Spin. Szumniak, P.; Bednarek, S.; Szafran, B.; Grynkiewicz, P. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p651 

    In this paper we propose and simulate operation of a nanodevice, which enables the electron spin accumulation and very precise read-out of its final value. We exploit the dependence of the electron trajectory on its spin state due to the spin-orbit coupling in order to distinguish between...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics