A low band gap, solution processable oligothiophene with a dialkylated diketopyrrolopyrrole chromophore for use in bulk heterojunction solar cells

Tamayo, Arnold Bernarte; Xuan-Dang Dang; Walker, Bright; Junghwa Seo; Kent, Tyler; Thuc-Quyen Nguyen
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
Bulk heterojunction solar cells are fabricated from blends of oligothiophene with a dialkylated diketopyrrolopyrrole chromophore:[6,6]-phenyl C71 butyric acid methyl ester. Absorption and photocurrent of the films extend to 800 nm. A power conversion efficiency (PCE) of 3.0% is obtained under simulated 100 mW/cm2 AM1.5 illumination with a 9.2 mA/cm2 short-circuit current density and an open-circuit voltage of 0.75 V. The hole and electron mobilities in the 50:50 blend are fairly balanced, 1.0×10-4 and 4.8×10-4 cm2/V s, respectively. This is the highest PCE reported to date for solar cells using solution processable small molecules.


Related Articles

  • Stoichiometry, mobility, and performance in bulk heterojunction solar cells. Andersson, L. Mattias; Zhang, Fengling; Inganäs, Olle // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p071108 

    Bipolar transport in blends of a copolymer of fluorene, thiophene and electron accepting groups, and the substituted fullerene [6,6]-phenyl-C61-butyric acid methylester have been studied through charge extraction by linearly increasing voltage on solar cells and with field effect transistors....

  • The temperature dependence of the anomalous Hall effects in p-type HgCdTe. Chen, M. C. // Journal of Applied Physics;2/15/1989, Vol. 65 Issue 4, p1571 

    Emphasizes the temperature dependence of the anomalous Hall mobility curves. Discussion on how Hall anomalies can be eliminated; Reason for the occurrence of the Hall anomalies; Analysis of the classical temperature-dependent Hall coefficient curves.

  • Localized electrons in dense heavy noble gases. Nazin, S.; Shikin, V. // Low Temperature Physics;Apr2009, Vol. 35 Issue 4, p303 

    The paper addresses counterintuitive behavior of electrons injected into dense cryogenic media with negative scattering length a0. Instead of the expected polaronic effect (formation of density enhancement clusters) which should substantially reduce the electron mobility, an opposite picture is...

  • Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with silicon. Jalil, A.; Chevallier, J.; Azoulay, R.; Mircea, A. // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3774 

    Presents electron mobility studies of the donor neutralization by atomic hydrogen in gallium arsenide (GaAs) doped with silicon. Reduction of the free-carrier concentration in the hydrogen diffused region; Factor attributed to the increase in the electron mobility; Mobility of free electrons in...

  • Systematic Conversion of Single Walled Carbon Nanotubes into n-type Thermoelectric Materials by Molecular Dopants. Yoshiyuki Nonoguchi; Kenji Ohashi; Rui Kanazawa; Koji Ashiba; Kenji Hata; Tetsuya Nakagawa; Chihaya Adachi; Tomoaki Tanase; Tsuyoshi Kawai // Scientific Reports;11/29/2013, p1 

    Thermoelectrics is a challenging issue for modern and future energy conversion and recovery technology. Carbon nanotubes are promising active thermoelectic materials owing to their narrow bandgap energy and high charge carrier mobility, and they can be integrated into flexible thermoelectrics...

  • Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers. Gámiz, F.; Cartujo-Cassinello, P.; Jiménez-Molinos, F.; Carceller, J. E.; Cartujo, P. // Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3120 

    We study the influence of the image and exchange-correlation effects in double-gate silicon-on-insulator (DGSOI) devices, in the calculation of both charge distribution and electron mobility. The image and exchange correlation potentials produce a greater confinement of the carriers and,...

  • Intrinsic limits on electron mobility in dilute nitride semiconductors. Fahy, S.; O'Reilly, E.P. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3731 

    A fundamental connection is established between the composition-dependence of the conduction band edge energy and the n-type carrier scattering cross section in the ultradilute limit for semiconductor alloys, imposing general limits on the carrier mobility in such alloys. From the measured...

  • Characteristics of an electroless plated-gate transistor. Li-Yang Chen; Huey-Ing Chen; Chien-Chang Huang; Yi-Wen Huang; Tsung-Han Tsai; Yi-Chun Liu; Tai-You Chen; Shiou-Ying Cheng; Wen-Chau Liu // Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052105 

    Temperature-dependent characteristics of an interesting pseudomorphic high electron mobility transistor with an electroless plated (EP) gate metal are studied and demonstrated. Under the low-temperature and low-energy electrochemical deposition conditions, the EP deposition technique provides an...

  • Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate. Cassé, M.; Tachi, K.; Thiele, S.; Ernst, T. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p123506 

    The density of interface states has been investigated experimentally on silicon nanowire transistors (SNWTs), with a high-k/metal gate stack. Low temperature measurements down to 25 K have been performed to determine the interface trap energy distribution throughout the Si band gap on nanowire...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics