Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [1120] to [0001]

Hyun-Jae Lee; Jun-Seok Ha; Goto, T.; Yao, T.; Chinkyo Kim; Soon-Ku Hong; Jiho Chang
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (1012) (r-plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [1120] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.


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