TITLE

Non-transition-metal doped diluted magnetic semiconductors

AUTHOR(S)
Xiangyang Peng; Ahuja, Rajeev
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on first-principles calculations, we have investigated the magnetic properties of non-transition-metal doped semiconductors Al(N,X) and Zn(O,X), where X is a first row atom. It is revealed that the dopant can remain magnetic only if it is less electronegative than the substituted host anion atom and the dopant 2p states are located within the energy gap of the host. The calculated magnetic moment per dopant in μB is the atomic number difference between the dopant and the host anion atom. The global magnetic order is determined by the hole number, the interaction between the 2p dopant states and their exchange splitting. It is found that the Curie temperature is highest when the atomic number of the dopant is smaller than that of the anion by two.
ACCESSION #
37043738

 

Related Articles

  • Growth of GaMnAs under near-stoichiometric conditions. Avrutin, V.; Humienik, D.; Frank, S.; Koeder, A.; Schoch, W.; Limmer, W.; Sauer, R.; Waag, A. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023909 

    We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular-beam epitaxy. For all the substrate temperatures, the conductivities and Curie temperatures of the layers were found to increase as...

  • Characterization of yttria-doped ceria prepared by directional crystallization. Hartmanová, M.; Lomonova, E. E.; NavráTil, V.; ŠUtta, P.; Kundracik, F. // Journal of Materials Science;Nov2005, Vol. 40 Issue 21, p5679 

    The oxygen nonstoichiometry and the related lattice defects in ceria crystals doped with the high concentration (13–26 mol%) of yttria and grown by the directional crystallization (skull technique) have been investigated. The results obtained using thermoanalysis, electrical conductivity...

  • Effect Of Hole Doping On Magnetic Properties Of GdBaCo2O5.5. Thirumurugan, N.; Satya, A. T.; Janaki, J.; Bharathi, A. // AIP Conference Proceedings;6/30/2011, Vol. 1347 Issue 1, p274 

    Magnetization measurements have been carried out in Gd1-xSrxBaCo2O5.5 samples. Sr doping increases the ferromagnetic (FM) window systematically and no antiferromagnetic transition is observed for the higher Sr content sample, x = 0.1. The temperature dependent coercive field increases with Sr...

  • Transport and Magnetic Properties of the Half-Heusler Compounds CoTi1-xVxSb. Nakatsu, Ryuichi; Hiroi, Masahiko; Tareuchi, Norihito; Kawakami, Masayuki // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p1247 

    Electrical resistivity, Hall coefficient, and magnetic properties of CoTi1-xVxSb (0 ≤ x ≤ 0.055) have been studied. The increase in the electrical resistivity is found for the samples in which V is lightly substituted. This result is contrary to the expectation that the substitution...

  • Ferromagnetic Order in Single-Crystalline (CdxAly)[Cr2]Sez Semiconductors. Duda, H.; Rduch, P.; Malicka, E.; Groń, T.; Kusz, J. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p702 

    Measurements of the magnetic properties, the electrical conductivity and the Seebeck effect were performed on single crystals (CdxAly)[Cr2]Sez between 77 and 300 K. All samples have a ferromagnetic order with the Curie temperature of 130 K and the paramagnetic Curie-Weiss temperature of 155 K....

  • Minority carrier diffusion length measurements in 6H–SiC. Polyakov, Alexander Y.; Qiang Li; Sung Wook Huh; Skowronski, Marek; Lopatiuk, Olena; Chernyak, Leonid; Sanchez, Edward // Journal of Applied Physics;3/1/2005, Vol. 97 Issue 5, p053703 

    Minority carrier diffusion lengths were measured as a function of temperature and position along the growth axis of lightly nitrogen doped boules of 6H–SiC grown by the physical vapor transport technique. It is shown that the diffusion lengths increase from 1 to 2 microns in the seed...

  • Tunability range of 245 nm in a diode-pumped Tm:BaY2F8 laser at 1.9 μm: a theoretical and experimental investigation. Coluccelli, N.; Gatti, D.; Galzerano, G.; Cornacchia, F.; Parisi, D.; Toncelli, A.; Tonelli, M.; Laporta, P. // Applied Physics B: Lasers & Optics;Dec2006, Vol. 85 Issue 4, p553 

    Extremely wide wavelength tuning ranges of up to ∼300 nm around 1.9 μm are theoretically predicted in a Tm-doped BaY2F8 crystal, on the basis of near-infrared measurements of emission and absorption cross sections. A tunability interval of 245 nm, from 1849 nm to 2059 nm, has been...

  • Effect of Al, Cu, Ga, and Nb additions on the magnetic properties and microstructural features of sintered NdFeB. Pandian, S.; Chandrasekaran, V.; Markandeyulu, G.; Iyer, K. J. L.; Rama Rao, K. V. S. // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p6082 

    This study describes the relative effect on the permanent magnet characteristics viz. remanence (B,.), intrinsic coercivity (H[SUBci]), Curie temperature (T[SUBc]), and rectangularity of the intrinsic demagnetization curve, when A1, Cu, Ga, and Nb are added individually to NdFeB. Each elemental...

  • Ionic Conductivity of Ln2 + xZr2 − xO7 − x/2 (Ln = Sm-Gd) Solid Solutions. Shlyakhtina, A.; Kolbanev, I.; Knotko, A.; Boguslavskii, M.; Stefanovich, S.; Karyagina, O.; Shcherbakova, L. // Inorganic Materials;Aug2005, Vol. 41 Issue 8, p854 

    The electrical conductivity of Ln2 + xZr2 − xO7 − x/2 (Ln = Sm-Gd) solid solutions prepared from mechanically activated Ln2O3 and ZrO2 is shown to correlate with their structural properties. In the three systems, the x-T regions are determined in which electrical transport is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics