TITLE

Thermal conductivities and phase transition temperatures of various phase-change materials measured by the 3ω method

AUTHOR(S)
Risk, W. P.; Rettner, C. T.; Raoux, S.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have employed the “3ω method” to determine the thermal conductivities of the amorphous and crystalline phases of the technologically important materials Ge2Sb2Te5, nitrogen-doped Ge2Sb2Te5, Ag- and In-doped Sb2Te, and Ge15Sb85. We used the “3ω voltage” as a monitor of thermal conductivity that allowed us to observe the amorphous-to-crystalline phase transition as the material was annealed. For these materials, our results reveal that the thermal conductivity κ is related to the electrical conductivity σ by an empirical relationship of the form κ=σLT+0.175 W/m K, where L is the Lorenz number and T is temperature.
ACCESSION #
37043723

 

Related Articles

  • Thermal conductivity at the amorphous-nanocrystalline phase transition in beech wood biocarbon. Parfen'eva, L.; Orlova, T.; Smirnov, B.; Smirnov, I.; Misiorek, H.; Jezowski, A.; Ramirez-Rico, J. // Physics of the Solid State;May2014, Vol. 56 Issue 5, p1071 

    High-porosity samples of beech wood biocarbon (BE-C) were prepared by pyrolysis at carbonization temperatures T = 650, 1300, and 1600°C, and their resistivity ρ and thermal conductivity κ were studied in the 5-300 and 80-300 K temperature intervals. The experimental results obtained...

  • Phase change random access memory cell with superlattice-like structure. Chong, T. C.; Shi, L. P.; Zhao, R.; Tan, P. K.; Li, J. M.; Lee, H. K.; Miao, X. S.; Du, A. Y.; Tung, C. H. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p122114 

    A superlattice-like structure (SLL) incorporating two nonpromising phase change materials was applied to phase change random access memory (PCRAM) cell. A properly designed SLL structure could balance both the phase change speed and stability of a PCRAM. Moreover, SLL PCRAM cells exhibited lower...

  • Phase change memory cell using tungsten trioxide bottom heating layer. Feng Rao; Zhitang Song; Yuefeng Gong; Liangcai Wu; Bo Liu; Songlin Feng; Bomy Chen // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p223507 

    Phase change memory (PCM) cell with tungsten trioxide (WO3) bottom heating layer is investigated. The crystalline WO3 heating layer promotes the temperature rise in Ge2Sb2Te5 layer that causes the reduction in reset voltage compared to a conventional PCM cell. The theoretical thermal simulation...

  • Relationship between melting and amorphization of ice. Mishima, Osamu // Nature;12/12/1996, Vol. 384 Issue 6609, p546 

    Describes experiments probing the relationship between pressure-induced amorphization and melting for a form of crystalline ice. The avoidance of the complication of crystal-crystal transformations interrupting the melting process; The sequence of transitions being a crossover from a two-phased...

  • Atomic structure and microtopography of interfaces between crystalline and amorphous phasees in tungsten. Bakaı, A. S.; Mikhaılovskiı, I. M.; Sadanov, E. V.; Velikodnaya, O. A.; Mazilova, T. I. // JETP Letters;10/10/97, Vol. 66 Issue 7, p504 

    The morphology of the interface between crystalline and amorphous phases in tungsten is investigated at the atomic level. Interfacial incoherence and a high degree of localization of imperfections are found. It is found that in the region near the interface the close-packed crystallographic...

  • Recrystallization of a planar amorphous-crystalline interface in silicon by low energy recoils: A molecular dynamics study. Caturla, Maria Jose; Diaz de la Rubia, Tomas; Gilmer, George H. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3121 

    Deals with a study which described the motion of an amorphous-crystalline interface in silicon induced by low energy recoils. Model description; Results; Discussion.

  • Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon.... Im, James S.; Kim, H.J. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1969 

    Investigates the phase transformation mechanisms and resulting microstructures of excimer laser-induced crystallization of amorphous silicon (Si) films on silicon oxide (SiO[sub 2]). Significance of large-grained polycrystal Si films; Characteristics of the transformation mechanisms involved in...

  • Amorphous phase transition mechanism by the mechanical alloying of the Fe–W system. Shen, T. D.; Wang, K. Y.; Quan, M. X.; Wang, J. T. // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1967 

    Studies the amorphous phase transition mechanism by the mechanical alloying of the iron and tungsten powders. Synthesis of amorphous alloys; Details on the experiment; Discussion on the results of the experiment.

  • Phase transition and entropy of amorphous ices. Johari, G. P. // Journal of Chemical Physics;4/15/1995, Vol. 102 Issue 15, p6224 

    Mishima’s recent data [J. Chem. Phys. 100, 5910 (1994)], showing that the isothermal interconversion of low- and high-density forms of pressure amorphized ice is of first order thermodynamically, have been analyzed in terms of the configurational entropy. At the equilibrium pressure of 2...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics