Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si

Severino, A.; Camarda, M.; Condorelli, G.; Perdicaro, L. M. S.; Anzalone, R.; Mauceri, M.; La Magna, A.; La Via, F.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
Two miscut directions of (111) Si substrate on 3C-SiC heteroepitaxial growth have been studied with the resulting 3C-SiC stress and defects as a function of miscut axis direction toward [110] and [112] of (111) Si analyzed. We studied this dependency from an experimental point of view, investigating the structural properties of 3C-SiC, and using a kinetic Monte Carlo method on superlattice to confirm our experimental findings with numerical simulations. Residual stress and stacking fault density were halved by growing on a (111) Si substrate off-cut toward the [110] direction. A different surface morphology was revealed between the two inclinations.


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