Step-terraced morphology of GaAs(001) substrates prepared at quasiequilibrium conditions

Alperovich, V. L.; Akhundov, I. O.; Rudaya, N. S.; Sheglov, D. V.; Rodyakina, E. E.; Latyshev, A. V.; Terekhov, A. S.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
“Step and terrace” surface morphology with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in the conditions close to equilibrium. These conditions were realized under molecular hydrogen ambient in a narrow slit (“capillary”) between two adjacent GaAs substrates or in a graphite cassette containing saturated Ga–GaAs melt. The evolution of the step and terrace morphology was characterized by the length of monatomic steps, which was proved to be a more adequate characteristic of flattening process as compared to the root mean square roughness.


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