Shape transition in very large germanium islands on Si(111)

MacLeod, J. M.; Lipton-Duffin, J. A.; Lanke, U.; Urquhart, S. G.; Rosei, F.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
Ge islands with areas up to hundreds of μm2 were grown on Si(111). These islands, grown above 750 °C and at a deposition rate of 1 monolayer/min, become decreasingly compact with increasing size and can have nonuniform cross sections with heights reaching over 500 nm. The largest islands are ramified, often comprising multiple discrete parts. X-ray photoemission electron microscopy absorption maps show that the islands have a higher concentration of Ge at their centers, with more Si near the edges. We propose that the shape transformation is driven by strain relief at the island perimeters.


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