TITLE

A model of interface defect formation in silicon wafer bonding

AUTHOR(S)
Vincent, S.; Radu, I.; Landru, D.; Letertre, F.; Rieutord, F.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A model of the defect formation at the bonding interface upon annealing in silicon wafer bonding is proposed in this paper. It is shown that the formation of the bonding defects depends on the thickness of the silicon oxide at the bonding interface. A mechanism of thermal voids formation is suggested based on the hydrogen solubility in amorphous silicon oxide. The interface gas quantity for various thicknesses of the buried oxide is predicted and good correlation with the experimental data is obtained.
ACCESSION #
37043690

 

Related Articles

  • Growth of buried silicon oxide in Si-Si bonded wafers upon annealing. Himcinschi, C.; Milekhin, A.; Friedrich, M.; Hiller, K.; Wiemer, M.; Gessner, T.; Schulze, S.; Zahn, D. R. T. // Journal of Applied Physics;2/1/2001, Vol. 89 Issue 3, p1992 

    Properties of the buried silicon oxide layer in Si-Si bonded wafers upon annealing were studied using Infrared (IR) spectroscopy and high resolution transmission electron microscopy (HRTEM). IR spectra of chemically etched Si-Si bonded wafers allow the thickness of the buried oxide layers to be...

  • Leakage current and capacitance characteristics of Si/SiO[sub 2] /Si single-barrier varactor. Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 5, p633 

    Abstract. We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO[sub 2]/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO[sub 2] layer thicknesses using the...

  • Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen. Ono, Haruhiko; Ikarashi, Taeko; Ogura, Atsushi // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    The formation process of buried oxide in low-dose oxygen-implanted wafers was investigated using Fourier-transform infrared absorption spectroscopy. In the wafers as-implanted with oxygen, the peak position of the Si–O–Si asymmetric stretching mode was observed to be lower in wave...

  • Ultradry oxidation system equipped with a newly designed gas preheating unit for growing ultrathin silicon oxide films. Yamada, Hiroshi // Review of Scientific Instruments;Nov94, Vol. 65 Issue 11, p3501 

    A practical thermal oxidation system used in ultradry, ultrathin silicon oxide film growth is described. It comprises a double-wall-type fused-quartz reactor, a newly designed material-gas preheating unit, and three vacuum chambers for dehydrating and exchanging wafers. The preheating unit, used...

  • Patterned growth of single-walled carbon nanotubes on full 4-inch wafers. Franklin, Nathan R.; Li, Yiming; Chen, Robert J.; Javey, Ali; Dai, Hongjie // Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4571 

    Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO[sub 2]/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be...

  • Crystalline zirconia oxide on silicon as alternative gate dielectrics. Wang, S. J.; Ong, C. K.; Xu, S. Y.; Chen, P.; Tjiu, W. C.; Chai, J. W.; Huan, A. C. H.; Yoo, W. J.; Lim, J. S.; Feng, W.; Choi, W. K. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1604 

    Epitaxial crystalline yittria-stabilized zirconia (YSZ) oxide films were grown on silicon wafers by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous...

  • Ar+ bombardment of Si(100) in oxygen atmosphere: Room temperature oxide formation studied by x-ray photoelectron spectroscopy. Terrasi, A.; Coluzza, C.; Margaritondo, G. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3820 

    Reports the formation of silicon oxide thin films at room temperature obtained by argon ion bombardment of silicon wafers in partial oxygen atmosphere. Method of the study; Results and discussion; Conclusion.

  • Electron microdiffraction studies of new SiO2 precipitates in silicon. Kim, Y.; Spence, J. C. H.; Long, N.; Bergholz, W.; O’Keeffe, M. // Journal of Applied Physics;7/15/1987, Vol. 62 Issue 2, p419 

    Presents a study that examined the coherent electron microdiffraction patterns of silicon oxide precipitates in silicon semiconductor wafers. Methodology; Analysis of the transmission electron micrographs of the precipitates; Determination of the size of the precipitates.

  • Vertically integrated double-layer on-chip silicon membranes for 1-to-12 waveguide fanouts. Zhang, Yang; Hosseini, Amir; Ahn, Jaehyun; Kwong, David N.; Fallahazad, Babak; Tutuc, Emanuel; Chen, Ray T. // Applied Physics Letters;4/30/2012, Vol. 100 Issue 18, p181102 

    We present an on-chip vertically integrated three-dimensional photonic integrated circuit. Double-layer 1 × 12 multimode interference (MMI) couplers are fabricated on silicon membranes using double-bonded silicon-on-insulator wafers. The input light is transverse electric polarized,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics