Effect of nitrogen-vacancy complex defects on the electronic transport of carbon nanotube

Jianwei Wei; Huifang Hu; Zhiyong Wang; Hui Zeng; Yan Wei; Jinfeng Jia
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
Effect of nitrogen-vacancy complex defects on the transport properties of single-walled nanotubes are simulated using density functional theory and nonequilibrium Green’s functions. We find that the defect state in carbon nanotubes becomes spatially localized and develops one half-filled impurity band near the Fermi level for either N-vacancy or N3-vacancy defect. The impurity bands are favorable to the electronic transport of the semiconducting nanotube (8, 0) but weaken that of metallic (4, 4). The studied results show that the differential conductance of the nanotubes behaves obvious oscillation characteristic.


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