A unified model of nucleation switching

Nardone, M.; Karpov, V. G.; Jackson, D. C. S.; Karpov, I. V.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
A unified field-induced nucleation model provides a common mechanism for switching in chalcogenide phase change memory and related devices of arbitrary thickness. We employ the model to derive equations for the threshold and holding voltages in terms of material parameters and device thickness, which are in excellent agreement with previous measurements and our data.


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