TITLE

Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser

AUTHOR(S)
Then, H. W.; Wu, C. H.; Walter, G.; Feng, M.; Holonyak, N.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A tunnel junction is incorporated at the collector of a transistor laser to provide an effective method for voltage-controlled modulation via internal (intracavity) Franz–Keldysh photon-assisted tunneling. Electrical-optical signal mixing above threshold is made possible by the nonlinear coupling of the optical field to the base emitter-to-collector carrier transport and the base-to-collector electron tunneling. Microwave signal mixing with a common-emitter tunnel junction transistor laser is demonstrated with a pair of input sinusoidal signals: one (f1=2.0 GHz) at the base using current modulation and the other (f2=2.1 GHz) at the collector using voltage modulation, producing an optical output with harmonics of up to (4f1+7f2)=22.7 GHz, despite being limited by amplifier bandwidth.
ACCESSION #
37043666

 

Related Articles

  • Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling. Alimardania, Nasir; Conley Jr., John F. // Applied Physics Letters;8/25/2014, Vol. 105 Issue 8, p1 

    Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al2O3-Ta2O5 bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant...

  • Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency... Sun, J.J.; Soares, V.; Freitas, P.P. // Applied Physics Letters;1/18/1999, Vol. 74 Issue 3, p448 

    Reports on the fabrication of spin-dependent tunnel junctions with resistance-area products (R[sub J]xA) down to 1.8 kilo Ohms x cubic micrometers and tunneling resistance (TMR) >/= 15%. Junction areas; Junction resistance and TMR versus Al thickness; Dependence of TMR on oxidation time.

  • Turn-on spread determines the size of the switching region in an avalanche transistor. Duan, Guoyong; Vainshtein, Sergey; Kostamovaara, Juha // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p193505 

    It has been shown recently that only a small part of the emitter-base interface in a Si bipolar junction transistor participates in short-pulsing avalanche switching. This lateral current shrinkage attributed to the 'winner takes all' effect reduces the transistor switching size from 1600 to...

  • High frequency components of current fluctuations in semiconductor tunneling barriers. Oriols, Xavier; Martı´n, Ferran; Sun˜e´, Jordi // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4048 

    The power spectral density of current noise in phase-coherent semiconductor tunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An...

  • Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors. Cheng, T.-H.; Liao, M. H.; Yeh, Lingyen; Lee, T.-L.; Liang, M.-S.; Liu, C. W. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p016103 

    Both Ge light-emitting diodes and photodetectors are demonstrated by using the same metal-insulator-semiconductor (MIS) tunneling structure. A Ge MIS tunneling diode biased at the accumulation region is used as a light-emitting device and a Ge MIS tunneling diode biased at the inversion region...

  • Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts. Rivas, Cristian; Lake, Roger; Klimeck, Gerhard; Frensley, William R.; Fischetti, Massimo V.; Thompson, Phillip E.; Rommel, Sean L.; Berger, Paul R. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p814 

    Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current-voltage response of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Electron confinement in the contacts results in weak structure in the...

  • Spin-dependent density of states in Ga1-xMnxAs probed by tunneling spectroscopy. Saito, H.; Yamamoto, A.; Yuasa, S.; Ando, K. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p194104 

    We conducted spin-dependent tunneling spectroscopy measurements in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes that had a metal-insulator-semiconductor structure. The tunneling magnetoresistance signal in differential conductance spectra (dI/dV-V) was found to disappear for bias voltages (V)...

  • Observation of strain in pseudomorphic Si1-xGex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy. Yu, Ronghua; Anisha, R.; Jin, Niu; Chung, Sung-Yong; Berger, Paul R.; Gramila, Thomas J.; Thompson, Phillip E. // Journal of Applied Physics;Aug2009, Vol. 106 Issue 3, p034501 

    High-sensitivity and low-noise electron tunneling spectroscopy was used to measure the phonon spectra via band-to-band tunneling in Si/SiGe resonant interband tunneling diodes (RITD), tracking the effects of the weighted average Ge percentage in the central tunneling spacer. With a composite...

  • Full band modeling of the excess current in a delta-doped silicon tunnel diode. Rivas, Cristian; Lake, Roger; Frensley, William R.; Klimeck, Gerhard; Thompson, Phillip E.; Hobart, Karl D.; Rommell, Sean L.; Berger, Paul R. // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p5005 

    The current of a molecular beam epitaxially grown Sb and B delta-doped Si tunnel diode is simulated in all regions of tunneling: peak, valley, and post-valley turn-on. All three regions of the I–V are qualitatively captured by the calculations. The inclusion in the model of bandtail...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics