Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Keun Woo Lee; Kon Yi Heo; Hyun Jae Kim
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.


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