Co-doped TiO2 films grown on glass: Room-temperature ferromagnetism accompanied with anomalous Hall effect and magneto-optical effect

Yamasaki, T.; Fukumura, T.; Yamada, Y.; Nakano, M.; Ueno, K.; Makino, T.; Kawasaki, M.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
Room-temperature ferromagnetic oxide semiconductor Co-doped TiO2 films are grown on glass substrates by sputtering method. Conducting films are ferromagnetic at room temperature that is consistent with the carrier-mediated nature of the ferromagnetism. Nearly full-polarized magnetization, large magneto-optical effect, and anomalous Hall effect are observed at room temperature. The magneto-optical effect shows nearly fourfold enhancement in a one-dimensional magnetophotonic crystal structure with a standard dielectric multilayer (SiO2/TiO2).


Related Articles

  • Dose dependence of ferromagnetism in Co-implanted ZnO. Akdogan, Numan; Zabel, Hartmut; Nefedov, Alexei; Westerholt, Kurt; Becker, Hans-Werner; Gök, Safak; Khaibullin, Rustam; Tagirov, Lenar // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    We have studied the structural, magnetic, and electronic properties of Co-implanted ZnO(0001) films grown on Al2O3 (1120) substrates for different implantation doses and over a wide temperature range. Strong room temperature ferromagnetism is observed with magnetic...

  • STRUCTURAL AND ELECTRICAL STUDIES OF ZnTe THIN FILM ON GLASS SUBSTRATE BY VACUUM EVAPORATION TECHNIQUE. Dwivedi, D. K.; Mishra, Mukesh; Shukla, A. K. // Bulletin of Pure & Applied Sciences-Physics;Jul-Dec2011, Vol. 30 Issue 2, p237 

    ZnTe thin films were grown on glass substrate by using vacuum evaporation technique. Hall effect measurement indicates that the ZnTe film was p-type. Dielectric studies such as dielectric constant and loss tangent (tan δ) as a function of frequency were performed for ZnTe films.Carrier...

  • Room temperature multiferroic behavior of Cr-doped ZnO films. Yang, Y. C.; Zhong, C. F.; Wang, X. H.; He, B.; Wei, S. Q.; Zeng, F.; Pan, F. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p064102 

    Single-phase 9 at. % Cr-doped ZnO film has been prepared on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method. The film is found to present ferroelectric and ferromagnetic behaviors simultaneously at room temperature, and it undergoes transitions to paraelectric and paramagnetic...

  • Experimental Investigation of Adjacent Hall Structures Parameters. Cholakova, Ivelina N.; Takov, Tihomir B.; Tsankov, Radostin Ts.; Simonne, Nicolas; Tzanova, Slavka S. // World Academy of Science, Engineering & Technology;2012, Issue 71, p1443 

    Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used,...

  • Field-controllable exchange bias in epitaxial Fe films grown on GaAs. Choi, Seonghoon; Yoo, Taehee; Khym, S.; Lee, Sanghoon; Liu, X.; Furdyna, J. K. // Applied Physics Letters;9/24/2012, Vol. 101 Issue 13, p132403 

    We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of...

  • Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film. Xi Shen; Chikamatsu, Akira; Kei Shigematsu; Yasushi Hirose; Tomoteru Fukumura; Tetsuya Hasegawa // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    We report the electrical transport properties of ferrimagnetic Mn4N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn4N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular...

  • Epitaxial growth and magnetoelectric relaxor behavior in multiferroic 0.8Pb(Fe1/2Nb1/2)O3–0.2Pb(Mg1/2W1/2)O3 thin films. Wei Peng; Lemée, N.; Dellis, J.-L.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.; Trontelj, Z.; Holc, J.; Kosec, M.; Blinc, R.; Karkut, M. G. // Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132507 

    We present electric and magnetic properties of 0.8Pb(Fe1/2Nb1/2)O3–0.2Pb(Mg1/2W1/2)O3 films epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. A narrow deposition window around 710 °C and 0.2 mbar has been identified to achieve epitaxial single-phase thin...

  • Determination of optical properties and thickness of nanolayers from the angular dependences of reflectance. Bilenko, D. I.; Sagaidachnyi, A. A.; Galushka, V. V.; Polyanskaya, V. P. // Technical Physics;Oct2010, Vol. 55 Issue 10, p1478 

    The possibility of multiparametric determination of properties of structures from the data on the dependence of reflectances R and R for polarized radiation and ratio R/ R on the angle of incidence θ and from the angular dependence 1/ R(Δ R/Δθ) is investigated. The results of...

  • Comment on “Dielectric tunability of (110) oriented barium strontium titanate epitaxial films on (100) orthorhombic substrates” [Appl. Phys. Lett. 89, 042903 (2006)]. Zembilgotov, A. G.; Böttger, U.; Waser, R. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p036101 

    A modified thermodynamic potential was derived to describe the phase states and dielectric properties of (110) oriented epitaxial films grown on orthorhombic substrates.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics