Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics

Guimard, Denis; Ishida, Mitsuru; Lin Li; Nishioka, Masao; Tanaka, Yu; Sudo, Hisao; Yamamoto, Tsuyoshi; Kondo, Hayato; Sugawara, Mitsuru; Arakawa, Yasuhiko
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
We present a method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated metal organic chemical vapor deposition. This process consists of removing the excess segregated antimony from the surface of InAs/Sb:GaAs QDs by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of InAs/Sb:GaAs QDs (high density, low coalescence) without the formation of antimony-induced nonradiative defects. Finally, we show that this better QD interface quality results in a strong decrease of the threshold current densities of InAs/Sb:GaAs QD lasers in the 1.3 μm band.


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