Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes

Kuo, P.-S.; Peng, C.-Y.; Lee, C.-H.; Shen, Y.-Y.; Chang, H.-C.; Liu, C. W.
March 2009
Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG
Academic Journal
The hole confinement due to the valence band offset of the Si/SiGe/Si quantum well causes the shrinkage of depletion region for the n-type Si/Si0.2Ge0.8/Si Schottky barrier diodes with Pt gates. The capacitance of Si/Si0.2Ge0.8/Si Schottky diodes has approximately two times the capacitance of the control Si device. Moreover, the high electrical field leads to a high thermionic-field emission current and a large image-force lowering at both reverse and forward biases. The conventional capacitor-voltage method cannot be used to accurately measure the barrier height of Si/SiGe/Si quantum well Schottky diodes due to the shrinkage of depletion region.


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