TITLE

High hole mobility in boron doped diamond for power device applications

AUTHOR(S)
Volpe, Pierre-Nicolas; Pernot, Julien; Muret, Pierre; Omnès, Franck
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low boron doped homoepitaxial diamond layers were grown on Ib (100) diamond substrates with oxygen added to the gas mixture. The acceptor density of the samples has been estimated by C(V) and Hall effect to lie close to 1016 cm-3 with a maximum low field Hall mobility value of 1870 cm2/V s at 292 K. The presence of oxygen in the gas phase is shown to be a key parameter to obtain such characteristics. The mobility parameters required to simulate the electrical behavior of devices between 300 K and 500 K are then determined for a wide doping range.
ACCESSION #
36941032

 

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