Blue to deep UV light emission from a p-Si/AlN/Au heterostructure

Zhao, J. L.; Tan, S. T.; Iwan, S.; Sun, X. W.; Liu, W.; Chua, S. J.
March 2009
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
Academic Journal
Undoped AlN thin film has been grown on p-Si (111) by metal-organic chemical-vapor deposition. The p-Si/AlN/Au heterostructured light-emitting diode was further fabricated and investigated. The current-voltage characteristic showed a typical back-to-back diode behavior, which is responsible for the electroluminescence at both forward and reverse bias. A deep UV emission at 283 nm as well as a UV emission at 380 nm was observed from the forward biased p-Si/AlN/Au diode, while a blue emission at 490 nm was detected from the diode under reverse bias. The recombination mechanism for each emission band was discussed based on the energy band diagram.


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