Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes

Yu He; Jinyu Zhang; Shimin Hou; Yan Wang; Zhiping Yu
March 2009
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
Academic Journal
Schottky barrier (SB) formation at the contact interface between metal and semiconducting carbon nanotubes (CNTs) is of great importance in determining the transport characteristics of a CNT field effect transistor. In this paper, we studied the SB height (SBH) between different metals and CNT contacts using first-principles calculation. A method to calculate SBH is proposed based on the interface dipole effect, which will induce an electrical potential variation at the metal and CNT interface. The SBH of a metal and CNT contact could then be determined by the work function difference between the metal and CNT and the electrical potential variation. We extensively investigated different contacts between Sc, Al, Pd, (8,0) CNT, and (11,0) CNT. The calculated SBHs for these contacts are all in good agreement with experimental results.


Related Articles

  • Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes. Zhang, Yuan Yuan; Shi, Yumeng; Chen, Fuming; Mhaisalkar, S. G.; Li, Lain-Jong; Ong, Beng S.; Wu, Yiliang // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p223512 

    A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3‴-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of...

  • Carbon nanotube field-effect transistors with molecular interface. Chen, Kan-Sheng; McGill, Stephen A.; Xiong, Peng // Applied Physics Letters;3/21/2011, Vol. 98 Issue 12, p123110 

    We report on a study of molecular modifications of the electronic characteristics of single-walled carbon nanotube (SWNT) field-effect transistors (FETs) through insertion of different organic self-assembled monolayers (SAMs) between the SWNT and an electrode. The changes induced by the...

  • Current anisotropy of carbon nanotube diodes: Voltage and work function dependence. Perello, David J.; Seong Chu Lim; Seung Jin Chae; Innam Lee; Kim, Moon. J.; Young Hee Lee; Minhee Yun // Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p263107 

    Here, we report a performance analysis on carbon nanotube (CNT) Schottky diodes using source-drain current anisotropy. An analytical model is derived based on thermionic field emission and used to correlate experimental data from Pd–Hf, Ti–Hf, Cr–Hf, Ti–Cr, and...

  • Strain effects on the performance of zero-Schottky-barrier double-walled carbon nanotube transistors. Wahab, Md. Abdul; Khosru, Quazi D. M. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 3, p034301 

    Schrodinger’s equation is solved using recursive Green’s function algorithm self-consistently with Poisson’s equation to study the transport physics of uniaxial and torsional strained double-walled (DW) carbon nanotube (CNT) field-effect transistors (FETs) and to analyze...

  • Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions. An, Yanbin; Rao, Hemant; Bosman, Gijs; Ural, Ant // Applied Physics Letters;5/21/2012, Vol. 100 Issue 21, p213102 

    The electronic noise of single-walled carbon nanotube (CNT) film-Silicon Schottky junctions under forward bias is experimentally characterized. The superposition of a stable 1/f noise and a temporally unstable Lorentzian noise is observed, along with a random telegraph signal (RTS) in the time...

  • Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor. Takshi, Arash; Dimopoulos, Alexandros; Madden, John D. // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p083513 

    Although the capacitance measurement is a common method to obtain the depletion width in a Schottky contact, the method is challenging in an organic Schottky junction since the capacitance is a combination of the capacitances associated with the trapped charges, bulk semiconductor, and the...

  • Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter. Chang, C. Y.; Wu, B. S.; Fang, Y. K.; Lee, R. H. // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p49 

    An amorphous silicon indium tin oxide/n+-i-δ( p+)i/Al Schottky barrier phototransistor was fabricated on a glass substrate, where δ( p+) is the thin (200 Å) p+ base. The operation of the transistor is similar to that of an n+-i-δ( p+)i-n+ amorphous silicon bulk barrier...

  • Microwave rectification by a carbon nanotube Schottky diode. Cobas, Enrique; Fuhrer, Michael S. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p043120 

    Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior and rectify currents of up to 100 nA and at frequencies of up to 18 GHz. The...

  • Carbon nanotube semitransparent electrodes for amorphous silicon based photovoltaic devices. Del Gobbo, S.; Castrucci, P.; Scarselli, M.; Camilli, L.; De Crescenzi, M.; Mariucci, L.; Valletta, A.; Minotti, A.; Fortunato, G. // Applied Physics Letters;5/2/2011, Vol. 98 Issue 18, p183113 

    Different amounts of single wall carbon nanotubes (SWCNTs) have been sprayed on amorphous silicon substrates to form Schottky barrier solar cells. The measured external quantum efficiency showed a spectral behavior depending on the SWCNT network optical transparency, presenting a maximum up to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics