TITLE

Ab initio study of energy band structures of GaAs nanoclusters

AUTHOR(S)
Jiang, J.; Gao, B.; Han, T.-T.; Fu, Y.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic states and optical transitions of hydrogen terminated GaAs nanoclusters up to 16.9 nm in diameter were studied using a large-scale quantum chemistry approach called central insertion scheme by which the quantum confinement effect is shown to quantitatively agree with experimental results. The ab initio study further reveals that the effective mass of the conduction-band electron (valence-band hole) in the GaAs nanocluster is larger (smaller) than the bulk material value.
ACCESSION #
36940985

 

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