TITLE

All-inorganic light emitting device based on ZnO nanoparticles

AUTHOR(S)
Neshataeva, E.; Kümmell, T.; Bacher, G.; Ebbers, A.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on room-temperature electroluminescence from an all-inorganic light emitting device based on spin-coated ZnO nanoparticles. A tight submicron thick layer was fabricated on a fluorine doped tin oxide glass as a substrate using commercially available ZnO nanoparticles from the gas phase. After the evaporation of the top Al electrode, a diodelike I-V characteristic was obtained. An emission peak at around 390 nm and a broad defect-related electroluminescence in the visible range were observed at voltages below 10 V and ambient air conditions.
ACCESSION #
36940978

 

Related Articles

  • Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes. Zhang, S. G.; Zhang, X. W.; Yin, Z. G.; Wang, J. X.; Dong, J. J.; Gao, H. L.; Si, F. T.; Sun, S. S.; Tao, Y. // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p181116 

    We demonstrate the surface plasmon (SP) enhanced n-ZnO/AlN/p-GaN light-emitting diodes (LEDs) by inserting the Ag nanoparticles (NPs) between the ZnO and AlN layers. The ultraviolet/violet near band edge emission of the device is significantly enhanced while the green defect-related emission is...

  • Selective growth of single-crystalline ZnO nanowires on doped silicon. Könenkamp, R.; Word, R. C.; Dosmailov, M.; Meiss, J.; Nadarajah, A. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p056103 

    We report the growth of single-crystalline ZnO nanowires on n- and p-type Si wafers by electrodeposition. On strongly doped n-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n-type or in...

  • Doping of the nanocrystalline semiconductor zinc oxide with the donor indium. Agne, Th.; Guan, Z.; Li, X.M.; Wolf, H.; Wichert, Th.; Natter, H.; Hempelmann, R. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1204 

    Doping of the nanocrystalline semiconductor ZnO with the donor [sup 111]In was achieved by the incorporation of [sup 111]In atoms during the growth process followed by a hydrothermal treatment at 473 K. The incorporation of [sup 111]In on substitutional Zn sites was shown by the perturbed...

  • Electrically pumped ZnO film ultraviolet random lasers on silicon substrate. Ma, Xiangyang; Chen, Peiliang; Li, Dongsheng; Zhang, Yuanyuan; Yang, Deren // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p251109 

    The electrically pumped ultraviolet (UV) random lasing in c-axis oriented ZnO polycrystalline films has been demonstrated. For this demonstration, a metal-oxide-semiconductor structure of Au/SiOx(x<2)/ZnO film was fabricated on a silicon substrate. With ever-higher forward bias where the...

  • Electroluminescence from ZnO nanoparticles/organic nanocomposites. Lee, Chun-Yu; Haung, Yau-Te; Su, Wei-Fang; Lin, Ching-Fuh // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231116 

    The authors report ultraviolet electroluminescence from ZnO nanoparticle-based devices prepared by the phase-segregation technique. The conditions for phase segregation are investigated using confocal microscopy. With proper parameters for phase segregation, the ZnO nanoparticles and...

  • Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodes. Han-Ki Kim; Kyu-Sung Lee; Kwon, J. H. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p012103 

    We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 Ω/cm and average transmittance above 88% in visible range were...

  • ZnO-based light-emitting metal-insulator-semiconductor diodes. Hwang, Dae-Kue; Oh, Min-Suk; Lim, Jae-Hong; Choi, Yong-Seok; Park, Seong-Ju // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p121113 

    The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge...

  • Simulation of hybrid ZnO/AlGaN single-heterostructure light-emitting diode. Bulashevich, Kirill A.; Evstratov, Igor Yu.; Nabokov, Vladislav N.; Karpov, Sergey Yu. // Applied Physics Letters;12/12/2005, Vol. 87 Issue 24, p243502 

    Using simulations, we have examined specific features of a hybrid n-ZnO/p-AlGaN light-emitting diode (LED) operation, originated from a type-II band alignment and a negative polarization charge at the ZnO/AlGaN interface. These factors are found to improve the carrier confinement near the...

  • Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer. Jung, J. H.; Jin, J. Y.; Lee, I.; Kim, T. W.; Roh, H. G.; Kim, Y.-H. // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p112107 

    The memory effects of ZnO nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that ZnO nanocrystals were created inside the PI layer. Capacitance-voltage (C-V) measurements on...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics