Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K

Nash, G. R.; Przeslak, S. J. B.; Smith, S. J.; de Valicourt, G.; Andreev, A. D.; Carrington, P. J.; Yin, M.; Krier, A.; Coomber, S. D.; Buckle, L.; Emeny, M. T.; Ashley, T.
March 2009
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
Academic Journal
Electroluminescence from GaInSb/AlGaInSb type I quantum well diode lasers, grown on GaAs, has been investigated as a function of strain in the quantum wells. Lasing was observed, in pulsed operation, up to temperatures of 161, 208, 219, and 202 K for structures containing 0.55%, 0.62%, 0.78%, and 1.1% strain, respectively, with lasing occurring at ∼3.3 μm at 200 K for the 1.1% structure.


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