TITLE

Dielectric relaxation behavior of undoped, Ce-, and Cr-doped Sr0.5Ba0.5Nb2O6 at high temperatures

AUTHOR(S)
Tsang-Tse Fang; Han-Yang Chung
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dielectric relaxation behavior of undoped, Ce-, and Cr-doped Sr0.5Ba0.5Nb2O6 in the nondispersion region below Burns temperature [G. Burns and F. H. Dacol, Phys. Rev. B 28, 2527 (1983)] has been examined by the equation [variant_greek_epsilon](T)=[variant_greek_epsilon]l[T/(T-Tc)] ([variant_greek_epsilon] is the dielectric constant, [variant_greek_epsilon]l is the high-frequency permittivity, T is the temperature, and Tc is a parameter of the high temperature expansion of the dielectric constant) underlying Vugmeister’s theory [B. E. Vugmeister, Phys. Rev. B 73, 174117 (2006)]. The validity of this equation has been justified, and the physical meaning of [variant_greek_epsilon]l has also been confirmed. The variation in Tc with the dopant content has been discussed.
ACCESSION #
36940946

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics