TITLE

High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs

AUTHOR(S)
Zollo, G.
PUB. DATE
August 2000
SOURCE
Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1806
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the application of high resolution transmission electron microscopy to zinc implanted gallium arsenide at elevated temperature. Gaussian-like in-depth distributions of damage clusters; Depth distribution of residual damaged areas in the annealed samples; Probable causes of homogeneity of the residual cluster distribution.
ACCESSION #
3690423

 

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