TITLE

Inverse square-root field dependence of conductivity in organic field-effect transistors

AUTHOR(S)
Wei, J. H.; Gao, Y. L.; Wang, X. R.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Variable-range hopping is usually the main electron transport mechanism of an organic semiconductor at low temperature. For an organic field-effect transistor at low temperature and under both high source-drain bias and high gate voltage, it is argued that multistep tunneling (MUST) can dominate charge transport. The MUST occurs through the assistance of randomly distributed localized states. The conductivity depends exponentially on the inverse of the square-root of electric field. This result explains well the recent experimental observation [A. S. Dhoot et al., Phys. Rev. Lett. 96, 246403 (2006)].
ACCESSION #
36797996

 

Related Articles

  • Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device. Capasso, Federico; Kiehl, Richard A. // Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, p1366 

    Discusses a study that proposed a negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region. Resonant tunneling by high-energy minority carrier injection into the quantum state rather...

  • Zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions. Ning Tang; Bo Shen; Kui Han; Fang-Chao Lu; Fu-Jun Xu; Zhi-Xin Qin; Guo-Yi Zhang // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p172113 

    The zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions has been investigated at low temperatures and high magnetic fields. The zero-field spin-splitting energy and the spin-orbit coupling parameter are obtained by means of beating pattern Shubnikov–de...

  • Modeling and simulation of carbon nanotube-semiconductor heterojunction vertical field effect transistors. Chen, Wenchao; Rinzler, Andrew G.; Guo, Jing // Journal of Applied Physics;Jun2013, Vol. 113 Issue 23, p234501 

    The scaling behavior of carbon nanotube (CNT)-organic semiconductor heterojunction enabled vertical field effect transistors are comprehensively examined by two-dimensional consistent device simulations. Tunneling current is modeled by introducing tunneling induced carrier generation into the...

  • Band-like temperature dependence of mobility in a solution-processed organic semiconductor. Sakanoue, Tomo; Sirringhaus, Henning // Nature Materials;Sep2010, Vol. 9 Issue 9, p736 

    The mobility μ of solution-processed organic semiconductorshas improved markedly to room-temperature values of 1–5 cm2 V−1 s−1. In spite of their growing technological importance, the fundamental open question remains whether charges are localized onto individual molecules...

  • Thermally excited tunneling from a metastable electronic state in a single-Cooper-pair transistor. Rees, D. G.; Glasson, P.; Simkins, L. R.; Collin, E.; Antonov, V.; Frayne, P. G.; Meeson, P. J.; Lea, M. J. // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173508 

    Metastable electron traps and two-level systems (TLSs) are common in solid-state devices and lead to background charge movement and charge noise in single-electron and single-Cooper-pair transistors. We present measurements of the real-time capture and escape of individual electrons in...

  • Fabrication and characterization of metal-oxide-nitride-oxynitride-polysilicon nonvolatile semiconductor memory device with silicon oxynitride (SiOxNy) as tunneling layer on glass. Jung, Sungwook; Kim, Jaehong; Son, Hyukjoo; Hwang, Sunghyun; Jang, Kyungsoo; Lee, Jungin; Lee, Kwangsoo; Park, Hyungjun; Kim, Kyunghae; Yi, Junsin; Chung, Hokyoon; Choi, Byoungdeog; Lee, Kiyong // Journal of Applied Physics;Nov2007, Vol. 102 Issue 9, p094502 

    A nonvolatile semiconductor memory (NVSM) device with a metal-oxide-nitride-oxynitride-polysilicon (MONOS) structure on a rough polysilicon (poly-Si) surface was fabricated using a low-temperature process and poly-Si thin film transistor (TFT) technology on glass. For the fabrication of the NVSM...

  • Velocity-field characteristics of polycrystalline pentacene field-effect transistors. Cobb, Brian; Liang Wang; Dunn, Lawrence; Dodabalapur, Ananth // Journal of Applied Physics;Jul2010, Vol. 107 Issue 12, p124503 

    In this article, we report on the carrier velocity of polycrystalline pentacene transistors as a function of lateral electric field in both quasistatic and nonquasistatic regimes. We performed a series of measurements on devices with a range of channel lengths. At moderate lateral electric...

  • Investigations of electron injection in a methanofullerene thin film transistor. von Hauff, Elizabeth; Parisi, Jürgen; Dyakonov, Vladimir // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p073713 

    In this study we investigate charge injection into a methanofullerene. The temperature and electric field dependent source-drain currents from contact limited [6,6]-phenyl C61-butyric acid methyl ester (PCBM) thin film transistors (TFTs) were analyzed. A form for the temperature and field...

  • Dissipative tunneling control by elliptically polarized fields. Hartmann, Ludwig; Grifoni, Milena // Journal of Chemical Physics;8/15/1998, Vol. 109 Issue 7, p2635 

    Investigates the tunneling dynamics of a dissipative two-level system driven by elliptically polarized fields. Specifications of the generalized master equation (GME); Comparison between numerical solutions of the GME and analytical approximations to the periodic dynamics; Identification of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics