TITLE

HfOxNy gate dielectric on p-GaAs

AUTHOR(S)
Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Plasma nitridation method is used for nitrogen incorporation in HfO2 based gate dielectrics for future GaAs-based devices. The nitrided HfO2 (HfOxNy) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10-6 A cm-2 have been achieved at VFB-1 V for nitrided HfO2 films. A nitride interfacial layer (GaAsO:N) was observed at HfO2–GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO2 film.
ACCESSION #
36797992

 

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