Dielectric relaxation properties of nanostructured Ce0.8Gd0.1Pr0.1O2-δ material at intermediate temperatures

Baral, Ashok Kumar; Sankaranarayanan, V.
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
The dielectric relaxation behavior of the fluorite structured nanocrystalline Ce0.8Gd0.1Pr0.1O2-δ compound was studied in the temperature range of 200–550 °C. Two different types of relaxation processes were observed corresponding to (1) defect pairs such as (PrCe′–VO)• and (GdCe′–VO)• and (2) the trimers such as (PrCe′–VO••–GdCe′). The correlation between ionic conduction and the dielectric properties of the nanocrystalline material is discussed. Very low values of the migration energy and association energy of the oxygen vacancies are observed, which are 0.42 and 0.03 eV, respectively. The obtained value of association energy agrees well with the theoretical prediction on doubly doped ceria.


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