Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi; Kubota, Masashi
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was achieved, with the threshold current and the corresponding threshold current density (Jth) of 46 mA and 3.1 kA/cm2, respectively. The correlation between lasing wavelength shift and electrical input power (Pin) under cw operation was investigated using LDs of which reflectivity of front facet were varied from 70% to 97%. The lasing wavelength increased with increasing Pin with a slope of 4.56 and 4.34 nm/W for 70% and 97% mirror, respectively. The result suggested that the redshift due to self-heating is more predominant than the blueshift due to band filling above Jth even at near green region for nonpolar GaN-based LDs and reduction in Pin is indispensable to improve wavelength stabilization.


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