In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Pereira, J.; Pichon, L. E.; Dussart, R.; Cardinaud, C.; Duluard, C. Y.; Oubensaid, E. H.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.


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