TITLE

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

AUTHOR(S)
Pereira, J.; Pichon, L. E.; Dussart, R.; Cardinaud, C.; Duluard, C. Y.; Oubensaid, E. H.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
ACCESSION #
36797968

 

Related Articles

  • Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination. Schoell, S. J.; Howgate, J.; Hoeb, M.; Auernhammer, M.; Garrido, J. A.; Stutzmann, M.; Brandt, M. S.; Sharp, I. D. // Applied Physics Letters;5/2/2011, Vol. 98 Issue 18, p182106 

    We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6H-SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in...

  • XPS study of palladium sensitized nano porous silicon thin film. KANUNGO, J; SELEGÅRD, L; VAHLBERG, C; UVDAL, K; SAHA, H; BASU, S // Bulletin of Materials Science;2010, Vol. 33 Issue 6, p647 

    Nano porous silicon (PS) was formed on p-type monocrystalline silicon of 2-5 Ω cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its nano structure, is responsible for the...

  • Adhesion between cured silicone rubber. Hirahara // International Polymer Science & Technology;2014, Vol. 41 Issue 6, pT21 

    The article discusses a study which clarifies the effect of corona discharge energy on the crosslinked treated silicone rubber's adhesion. An experiment was conducted using a Tigers Polymer Corp. SR-50 silicone rubber treated by corona discharge in which its surface composition was examined with...

  • Diamond-Like Carbon Films Formed by Means of Pulsed Supersonic Plasma Flow Deposition. Nastaushev, Yu. V.; Gavrilova, T. A.; Fedosenko, E. V.; Pozdnyakova, G. A.; Dultsev, F. N. // Solid State Phenomena;2014, Vol. 213, p137 

    A new technique for the formation of diamond-like carbon thin films with high growth rate on silicon wafers and glass surfaces was investigated. A pulsed plasma source based on disk magnetohydrodynamic accelerator was used; methane was a precursor. Scanning electron and atomic-force microscopy,...

  • Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy. Park, Tae Joo; Sivasubramani, Prasanna; Coss, Brian E.; Kim, Hyun-Chul; Lee, Bongki; Wallace, Robert M.; Kim, Jiyoung; Rousseau, Mike; Liu, Xinye; Li, Huazhi; Lehn, Jean-Sebastien; Hong, Daewon; Shenai, Deo // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092904 

    The effect of H2O and O3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La2O3 films grown at 250 °C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was...

  • Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS. Chavan, Ashonita; Chandola, Abhinav; Sridaran, Sujatha; Dutta, Partha // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p064512 

    A cadmium sulfide thin film deposited by a chemical bath deposition technique has been found to act as a passivating layer and a capping layer for GaSb photodiodes. X-ray photoelectron spectroscopy analysis shows the presence of Ga–S and Sb–S bonds along with the cadmium binding...

  • In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy. Lu, Hong-Liang; Terada, Yuki; Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152103 

    An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after...

  • In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. O’Connor, E.; Long, R. D.; Cherkaoui, K.; Thomas, K. K.; Chalvet, F.; Povey, I. M.; Pemble, M. E.; Hurley, P. K.; Brennan, B.; Hughes, G.; Newcomb, S. B. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p022902 

    We have studied an in situ passivation of In0.53Ga0.47As, based on H2S exposure (50–350 °C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO2 using Hf[N(CH3)2]4 and H2O precursors. X-ray photoelectron spectroscopy revealed the suppression of...

  • Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation. Li, X. F.; Liu, X. J.; Zhang, W. Q.; Fu, Y. Y.; Li, A. D.; Li, H.; Wu, D. // Applied Physics Letters;4/18/2011, Vol. 98 Issue 16, p162903 

    We report the characteristics of HfAlO films deposited on S- and GeO2-passivated Ge substrates at 150 °C by atomic layer deposition technique using Hf(NO3)4 and Al(CH3)3 as the precursors. The x-ray photoelectron spectroscopic analyses reveal that GeO2 passivation is more effective to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics