Photoelectric properties of Bi2O3/GaSe heterojunctions

Leontie, L.; Evtodiev, I.; Nedeff, V.; Stamate, M.; Caraman, M.
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
Photoelectrical characteristics and photoluminescence of n-Bi2O3/p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85–3.10 eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe.


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