Self-organization of In nanostructures on Si surfaces

Maojie Xu; Okada, Arifumi; Yoshida, Shoji; Shigekawa, Hidemi
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a [formula] surface at room temperature (RT) deposition. On a [formula] coexisting surface, nanowires were selectively grown in the Si(111)–In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy.


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