Annealing of self-assembled InAs/GaAs quantum dots: A stabilizing effect of beryllium doping

Pakarinen, J.; Polojärvi, V.; Aho, A.; Laukkanen, P.; Peng, C. S.; Schramm, A.; Tukiainen, A.; Pessa, M.
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
We investigated the effects of postgrowth thermal annealing on optical properties of beryllium-doped InAs quantum dot (QD) heterostructures grown by molecular beam epitaxy. Thermal annealing induced a blueshift of up to 200 meV in light emission from an undoped sample, while a sample having GaAs layer heavily doped with beryllium on top of the QD region exhibited a much smaller blueshift. This phenomenon is interpreted as due to suppression of annealing-induced In/Ga interdiffusion.


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