TITLE

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

AUTHOR(S)
Schindler, C.; Staikov, G.; Waser, R.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The kinetics of the switching process in Cu–SiO2-based electrochemical metallization memory cells was investigated as a function of the switching voltage and the SiO2 film thickness. We observe an exponential dependence of the switching rate on the switching voltage and no significant thickness dependence in the range from 5 to 20 nm SiO2. We conclude from our data that the cathodic electrodeposition represents the rate-limiting step of the switching kinetics. The voltage-time dilemma seems to be overcome by the exponential dependence of the switching rate in combination with a threshold voltage presumably originating from a nucleation overpotential.
ACCESSION #
36797932

 

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