In situ detection of porosity initiation during aluminum thin film anodizing

Van Overmeere, Quentin; Nysten, Bernard; Proost, Joris
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
High-resolution curvature measurements have been performed in situ during aluminum thin film anodizing in sulfuric acid. A well-defined transition in the rate of internal stress-induced curvature change is shown to allow for the accurate, real-time detection of porosity initiation. The validity of this in situ diagnostic tool was confirmed by a quantitative analysis of the spectral density distributions of the anodized surfaces. These were obtained by analyzing ex situ atomic force microscopy images of surfaces anodized for different times, and allowed to correlate the in situ detected transition in the rate of curvature change with the appearance of porosity.


Related Articles

  • Oxide thickness mapping of ultrathin Al[sub 2]O[sub 3] at nanometer scale with conducting atomic force microscopy. Olbrich, Alexander; Ebersberger, Bernd; Boit, Christian; Vancea, Johann; Hoffmann, Horst; Altmann, Hans; Gieres, Guenther; Wecker, Joachim // Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2934 

    In this work, we introduce conducting atomic force microscopy (C-AFM) for the quantitative electrical characterization of ultrathin Al[sub 2]O[sub 3] films on a nanometer scale length. By applying a voltage between the AFM tip and the conductive Co substrate direct tunneling currents in the sub...

  • Nanometer-scale conversion of Si[sub 3]N[sub 4] to SiO[sub x]. Chien, F. S.-S.; Chang, J.-W.; Lin, S.-W.; Chou, Y.-C.; Chen, T. T.; Gwo, S.; Chao, T.-S.; Hsieh, W.-F. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si[sub 3]N[sub 4] films to SiO[sub x]. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10[sup 3] nm/s at 10 V....

  • Nanoindentation Emerging As an Important Use for AFMs. Comello, Vic // R&D Magazine;Aug99, Vol. 41 Issue 9, p109 

    Reports on the application of atomic force microscopes (AFM) for indentation and imaging of thin films. Characteristics of a nanoscale film; Information on a nanoindentation instrument developed by Liam McDonnell, who manages the Center for Surface and Interface Analysis at the Cork Institute...

  • Surface morphology of laser deposited diamondlike films by atomic force microscopy imaging. Park, Hwantae; Hong, Young-Kyu; Kim, Jin Seung; Park, Chan; Kim, Jae Ki // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p779 

    The surface morphologies of diamondlike carbon (DLC) films with atomic force microscopy (AFM) are reported. The films were prepared by laser ablation with tuning power densities range from 3×108 to 1×1010 W/cm2. For power densities above 2×109 W/cm2, the films reveal smooth surfaces...

  • Step flow growth of (La,Ca)MnO[sub delta] thin films on (110)NdGaO[sub 3]. Zeng, X.T.; Wong, H.K. // Applied Physics Letters;11/27/1995, Vol. 67 Issue 22, p3272 

    Observes step flow growth patterns on a single-crystal (La,Ca)Mn[sub delta](LCMO) thin films using atomic force microscopy. Use of facing-target sputtering method in growing the films; Alignment and spacing of the steps; Average step width of the best sample; Parallelism of the step edges to...

  • Micro-fabricated piezoelectric cantilever for atomic force microscopy. Watanabe, Shunji; Fujii, Toru // Review of Scientific Instruments;Nov96, Vol. 67 Issue 11, p3898 

    Presents a study that successfully developed an atomic force microscope with a batch-fabricated silicon cantilever with a pyramidal stylus. High quality lead zirconate titanate piezoelectric thin film that allows displacement sensing and actuating; Use of a lever as an actuator for z feedback...

  • Microstructural dependence of penetration depth of Ag-doped YBa[sub 2]Cu[sub 3]O[sub 7-delta].... Pinto, R.; Kaur, Davinder // Applied Physics Letters;3/18/1996, Vol. 68 Issue 12, p1720 

    Examines the microstructural dependence of penetration depth of thin films using atomic force microscopy. Physical quantities of superconductivity; Use of the microstrip resonator technique in the measurement of the lambda; Correlation between lambda and the film microstructure.

  • Domain imaging and local piezoelectric properties of the (200)-predominant... Hu, G. D.; Xu, J. B. // Applied Physics Letters;9/13/1999, Vol. 75 Issue 11, p1610 

    Studies the domain imaging and local piezoelectric properties of the (200)-predominant thin film. Detection of the (200)-predominant thin film by an atomic force microscope in the piezoelectric mode; Content of the grains split by single domain walls; Types of domain walls formed in individual...

  • Strain-induced surface morphology of slightly mismatched In...Ga...-As films grown... Dumont, H.; Dazord, J. // Journal of Applied Physics;5/15/1999, Vol. 85 Issue 10, p7185 

    Presents an atomic force microscopic (AFM) observation of the surface morphology of thin films of indium gallium arsenic/indium phosphide. Experimental details; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics