TITLE

Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution

AUTHOR(S)
Kyoung-Kook Kim; Sam-dong Lee; Hyunsoo Kim; Jae-Chul Park; Sung-Nam Lee; Youngsoo Park; Seong-Ju Park; Sang-Woo Kim
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode. ZnO nanorods were grown into aqueous solution at the low temperature of 90 °C. With 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was increased by about 57% with no increase in a forward voltage over the conventional LEDs with planar ITO. The increased light extraction by the ZnO nanorod arrays is due to the formation of sidewalls and a rough surface, resulting in a multiple photon scattering at the LED surface.
ACCESSION #
36797916

 

Related Articles

  • Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition. Meyer, J.; G#x00F6;rrn, P.; Hamwi, S.; Johannes, H.-H.; Riedl, T.; Kowalsky, W. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073308 

    We present highly efficient transparent organic light emitting diodes (OLEDs) with Al doped ZnO (AZO) electrodes prepared by atomic layer deposition and pulsed laser deposition (PLD). The power and current efficiencies exceed 27 lm/W and 44 cd/A at a brightness level of 100 cd/m2, respectively....

  • Indium contamination from the indium–tin–oxide electrode in polymer light-emitting diodes. Schlatmann, A. R.; Floet, D. Wilms; Hilberer, A.; Garten, F.; Smulders, P. J. M.; Klapwijk, T. M.; Hadziioannou, G. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1764 

    We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and...

  • Highly efficient p-i-n-type organic light emitting diodes on ZnO:Al substrates. Tomita, Yuto; May, Christian; Toerker, Michael; Amelung, Joerg; Eritt, Michael; Loeffler, Frank; Luber, Claus; Leo, Karl; Walzer, Karsten; Fehse, Karsten; Huang, Qiang // Applied Physics Letters;8/6/2007, Vol. 91 Issue 6, p063510 

    Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By using green phosphorescent molecules in a...

  • Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes. Chih-Han Chen; Shoou-Jinn Chang; Sheng-Po Chang; Meng-Ju Li; I-Cherng Chen; Ting-Jen Hsueh; Cheng-Liang Hsu // Applied Physics Letters;11/30/2009, Vol. 95 Issue 22, p223101 

    The investigation explores the fabrication and characteristics of ZnO nanowire (NW)/p-GaN/ZnO NW heterojunction light-emitting diodes (LEDs). Vertically aligned ZnO NWs arrays were grown on the p-GaN substrate. The n-p-n heterojunction LED was fabricated by combining indium tin oxide/glass...

  • Organic light-emitting diodes with hydrogenated In-doped ZnO thin films as transparent conductive electrodes. Young Ran Park; Young Sung Kim // Journal of Materials Research;Jun2008, Vol. 23 Issue 6, p22 

    Hydrogenated In-doped ZnO (ZIO:H) films grown at different ratios, R, of hydrogen to argon were deposited at a substrate temperature of 100 °C for the organic light-emitting diodes (OLEDs). The OLEDs with the ZIO:H (R = 0.08) anode achieved a maximum luminance efficiency of 3.4 cd/A and a...

  • GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition. Xu, Kun; Xu, Chen; Xie, Yiyang; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei; Sun, Jie // Applied Physics Letters;11/25/2013, Vol. 103 Issue 22, p222105 

    Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent...

  • On the role of diluted magnetic cobalt-doped ZnO electrodes in efficiency improvement of InGaN light emitters. Hong-Ru Liu; Sin-Liang Ou; Shih-Yin Wang; Dong-Sing Wuu // Applied Physics Letters;7/11/2016, Vol. 109 Issue 2, p021110-1 

    The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were...

  • InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer. Tu, S. H.; Lan, C. J.; Wang, S. H.; Lee, M. L.; Chang, K. H.; Lin, R. M.; Chang, J. Y.; Sheu, J. K. // Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133504 

    We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au...

  • ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes. Min Lee, Jung; Yi, Jaeseok; Woo Lee, Won; Yong Jeong, Hae; Jung, Taeil; Kim, Youngchae; Il Park, Won // Applied Physics Letters;2/6/2012, Vol. 100 Issue 6, p061107 

    One-dimensional and two-dimensional hybrid structures, composed of vertical ZnO nanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes (LEDs). Compared with GaN LED without transparent conducting electrode, current injection and light emission...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics