Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K

Yao, Jia-Hsien; Li, Shin-Chih; Lan, Ming-Der; Chin, Tsung-Shune
February 2009
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
Academic Journal
Structural, magnetic, and electrical properties were investigated of Mn-doped amorphous silicon films prepared by magnetron sputtering with and without hydrogen. Ferromagnetism at room temperature was observed and no clusters or second phases were detected from x-ray diffraction and high-resolution transmission electron microscopy analyses. Hydrogenation enhances saturation magnetization, carrier concentration, and Curie temperature by about 500%, 300%–500%, and 100 K, respectively. The M-T curve of hydrogenated sample fits very well by combination of Curie–Weiss law and three-dimensional spin-wave. Anomalous Hall effect was reproducibly obtained at 150 K. These suggest that the origin of ferromagnetism may arise from the carrier mediated mechanism.


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