TITLE

Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K

AUTHOR(S)
Yao, Jia-Hsien; Li, Shin-Chih; Lan, Ming-Der; Chin, Tsung-Shune
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structural, magnetic, and electrical properties were investigated of Mn-doped amorphous silicon films prepared by magnetron sputtering with and without hydrogen. Ferromagnetism at room temperature was observed and no clusters or second phases were detected from x-ray diffraction and high-resolution transmission electron microscopy analyses. Hydrogenation enhances saturation magnetization, carrier concentration, and Curie temperature by about 500%, 300%–500%, and 100 K, respectively. The M-T curve of hydrogenated sample fits very well by combination of Curie–Weiss law and three-dimensional spin-wave. Anomalous Hall effect was reproducibly obtained at 150 K. These suggest that the origin of ferromagnetism may arise from the carrier mediated mechanism.
ACCESSION #
36797913

 

Related Articles

  • Microstructure and nanomechanical properties of nitrogenated amorphous carbon thin films... Lu, W.; Komvopoulos, K. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2642 

    Presents information on a study which investigated the deposition of thin films of nitrogenated amorphous carbon on silicon(100) substrate by reactive radio frequency sputtering. Experimental procedures; Results and discussion; Conclusions.

  • Growth of high-quality single-wall carbon nanotubes without amorphous carbon formation. Lacerda, R.G.; Teh, A.S.; Yang, M.H.; Teo, K.B.K.; Rupesinghe, N.L.; Dalal, S.H.; Kozoil, K.K.K.; Roy, D.; Amaratunga, G.A.J.; Milne, W.I.; Chhowalla, M.; Hasko, D.G.; Wyczisk, F.; Legagneux, P. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p269 

    We report an alternative way of preparing high-quality single-wall carbon nanotubes (SWCNTs). Using a triple-layer thin film of Al/Fe/Mo (with Fe as a catalyst) on an oxidized Si substrate, the sample is exposed to a single short burst (5 s) of acetylene at 1000 °C. This produced a high yield...

  • Direct high-resolution electron microscopy observations of sputtered a-axis oriented.... Wen, J.G.; Mahajan, S. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3334 

    Examines the preparation of sputtered a-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7] (YBCO) films by self-template method on strontium titanate substrates. Use of high-resolution electron spectroscopy; Observation of disordered cubic perovskite structure in the template layer; Account on the...

  • Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors. Yao, Jia-Hsien; Chen, Ming-Yuan; Tsai, Jai-Lin; Lan, Ming-Der; Chin, Tsung-Shune // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C302-1 

    Postannealing effect was studied on films of hydrogenated amorphous silicon with Mn addition grown by magnetron cosputtering. Structural, magnetic, and electrical properties were investigated. We did not detect any second phases or clusters after annealing. Annealing enhances saturation...

  • Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers. Céspedes, E.; Román, E.; Huttel, Y.; Chaboy, J.; García-López, J.; de Andrés, A.; Prieto, C. // Journal of Applied Physics;Aug2009, Vol. 106 Issue 4, p043912-1 

    Room temperature ferromagnetism has been obtained for different sets of Mn/Si3N4 multilayers prepared by sputtering. In order to find the most suitable conditions to stabilize the ferromagnetic ordering in this system, the evolution of the magnetic properties has been studied for films in which...

  • Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Valcheva, E.; Birch, J.; Persson, P. O. Å.; Tungasmita, S.; Hultman, L. // Journal of Applied Physics;12/15/2006, Vol. 100 Issue 12, p123514 

    Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to...

  • Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties. Feijoo, P. C.; del Prado, A.; Toledano-Luque, M.; San Andrés, E.; Lucía, M. L. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p084505 

    Scandium oxide (ScOx) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScOx/Si interfaces. These substrates are chemical silicon oxide (SiOx), H-terminated silicon surface and silicon...

  • Microstructure and transport properties of ZnO:Mn diluted magnetic semiconductor thin films. Yang, Z.; Beyermann, W. P.; Katz, M. B.; Ezekoye, O. K.; Zuo, Z.; Pu, Y.; Shi, J.; Pan, X. Q.; Liu, J. L. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    Microstructural studies using transmission electron microscopy were performed on a ZnO:Mn diluted magnetic semiconductor thin film. The high-resolution imaging and electron diffraction reveal that the ZnO:Mn thin film has a high structural quality and is free of clustering/segregated phases....

  • Near room-temperature formation of a skyrmion crystal in thin-films of the helimagnet FeGe. Yu, X. Z.; Kanazawa, N.; Onose, Y.; Kimoto, K.; Zhang, W. Z.; Ishiwata, S.; Matsui, Y.; Tokura, Y. // Nature Materials;Feb2011, Vol. 10 Issue 2, p106 

    The skyrmion, a vortex-like spin-swirling object, is anticipatedto play a vital role in quantum magneto-transport processes such as the quantum Hall and topological Hall effects. The existence of the magnetic skyrmion crystal (SkX) state was recently verified experimentally for MnSi and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics