TITLE

Mode locking of a GaInN semiconductor laser with an internal saturable absorber

AUTHOR(S)
Yoshita, Masahiro; Kuramoto, Masaru; Ikeda, Masao; Yokoyama, Hiroyuki
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser diode with an internal saturable absorber layer for the first time. Stable passive mode locking was confirmed at a repetition rate of 840 MHz. Furthermore, hybrid mode-locking operation incorporating rf current modulation generated optical pulses of 20 ps duration and 0.4 W peak power.
ACCESSION #
36609576

 

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