NiSiGe nanocrystals for nonvolatile memory devices

Chih-Wei Hu; Ting-Chang Chang; Chun-Hao Tu; Cheng-Neng Chiang; Chao-Cheng Lin; Sze, Simon M.; Tseung-Yuen Tseng
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.


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