Enhanced resolution and high aspect-ratio semiconductor nanopatterning by metal overcoating

Hayat, Alex; Berkovitch, Nikolai; Orenstein, Meir
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
We present a focused ion beam semiconductor nanopatterning technique enabling high resolution and high-aspect ratios. Undesired semiconductor material removal due to residual lower-intensity ion beam tails is prevented by a 20 nm slow-etch-rate TiO2 layer acting as an effective saturated-absorber dynamic mask. Resulting semiconductor features smaller than 30 nm and deeper than 350 nm correspond to aspect ratio higher than 10, while for larger features the aspect ratio can be as high as 15. The experimentally demonstrated results are in good agreement with the theoretical predictions. A transmission spectrum of a microcavity realized by this method conforms to numerical calculation results.


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