Point defects in sputtered NiO films

Wei-Luen Jang; Yang-Ming Lu; Weng-Sing Hwang; Tung-Li Hsiung; Wang, H. Paul
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
The dominant point defects in p-type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.


Related Articles

  • Characterization of sputtered NiO films using XRD and AFM. Hotovy, I.; Huran, J.; Spiess, L. // Journal of Materials Science;Apr2004, Vol. 39 Issue 7, p2609 

    Reports on the effect of the process parameters and post-deposition annealing on the microstructure and the surface morphology of nickel oxide (NiO) thin films. Search for the correlation between process parameters and the physical properties; Deposition of the NiO films by direct current...

  • Argon inclusion in sputtered films and the effect of the gas on molybdenum field emitter arrays. Chalamala, Babu R.; Reuss, Robert H. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2151 

    Residual gas analysis of a number of field emission displays showed that argon desorbed from molybdenum metal lines was the dominant gas in sealed vacuum packages. We present experimental results on the emission characteristics of molybdenum field emitter arrays in argon ambient. In argon, the...

  • Epitaxial PrBa[sub 2](Cu[sub 0.8]Al[sub 0.2])[sub 3]O[sub 7] thin films grown by rf sputtering. Jin, Mingji; Chen, Q. Y.; Tipparach, Udom; Chen, T. P.; Wang, C.; Seo, H. W.; Yuan, Lixi; Chu, W. K.; No, K. S.; Chen, C. L.; Song, Y. S. // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p3991 

    Epitaxial thin films of PrBa[sub 2](Cu[sub 0.8]Al[sub 0.2])[sub 3]O[sub 7] have been vacuum deposited by rf sputtering on the LaAlO[sub 3] substrates. Though electrically much more resistive, these Al-substituted films are all of orthorhombic structure and epitaxial quality on various oxide...

  • Development of conductive transparent indium tin oxide (ITO) thin films deposited by direct current (DC) magnetron sputtering for photon-STM applications. Deng, W.; Ohgi, T.; Nejo, H.; Fujita, D. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 5, p595 

    Abstract. Highly conductive and transparent indium tin oxide (ITO) thin films, each with a thickness of 100nm, were deposited on glass and Si(100) by direct current (DC) magnetron sputtering under an argon (Ar) atmosphere using an ITO target composed of 95% indium oxide and 5% tin oxide for...

  • Formation of epitaxial Tl[sub 2]Ba[sub 2]CaCu[sub 2]O[sub 8] thin films at low temperature in.... Yan, S.L.; Fang, L.; Song, Q.X.; Yan, J.; Zhu, Y.P.; Chen, J.H.; Zhang, S.B. // Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1845 

    Details the formation of epitaxial Tl[sub 2]Ba[sub 2]CaCu[sub 2]O[sub 8] thin films at low temperature in pure argon. Preparation of films by direct current magnetron sputtering; Range of the zero resistance temperatures; Obtainment of critical current density value.

  • New scaling relation for sputtered NbN films. Capone II, D. W.; Gray, K. E.; Kampwirth, R. T. // Journal of Applied Physics;1/1/1989, Vol. 65 Issue 1, p258 

    Presents a study that discovered a scaling relationship between the sputtering rate and the partial pressure of argon which leaves the superconducting properties of niobium-nitrogen films invariant. Effect of the increase in the partial pressure of argon; Factors that will produce...

  • Effects of sputtering pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd thin films. Shin, Sung-Chul; Kim, Jin-Hong; Ahn, Dong-Hoon // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p5664 

    Presents a study which investigated the effects of sputtering argon gas pressure on magnetic and magneto-optical properties in compositionally modulated cobalt/palladium thin films. Experimental details; Results and discussion; Conclusion.

  • Temperature and substrate dependence of Ar sputtering of CoSi2 thin films. Hong, Q. Z.; Harper, J. M. E. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4527 

    Presents a study which investigated the temperature dependence of 300 eV argon ion sputtering of CoSi[sub2] thin films. Experimental procedure; Results and discussion; Conclusions.

  • Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors. Liu, Z. W.; Yeo, S. W.; Ong, C. K. // Journal of Materials Research;Oct2007, Vol. 22 Issue 10, p9 

    N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics