Interfacial reactions at Al/LiF and LiF/Al

Xie, Z. T.; Zhang, W. H.; Ding, B. F.; Gao, X. D.; You, Y. T.; Sun, Z. Y.; Ding, X. M.; Hou, X. Y.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al–LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.


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