TITLE

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

AUTHOR(S)
Riester, S. W. E.; Stolichnov, I.; Trodahl, H. J.; Setter, N.; Rushforth, A. W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, T.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unambiguously signaled by a cusp in the temperature derivative of resistance. Polarization reversal in the ferroelectric copolymer polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) by voltage pulses of less than 10 V results in a reproducible nonvolatile shift in the cusp by as much as 7%–9%. The unique combination of a relatively large spontaneous polarization and low dielectric constant of the P(VDF-TrFE) gate promises a further reduction in the operation voltage.
ACCESSION #
36609516

 

Related Articles

  • Low-Frequency Noise of Single Junction GaAs Solar Cell Structure. Jungil Lee; Byung-Yong Yu; Ghibaudo, Gerard; Seong-Il Kim; Ilki Han // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p387 

    In this paper we report the preliminary results of current-voltage and low-frequency noise measurements on GaAs single junction solar cell with and without multi-quantum well intrinsic layer. The current-voltage characteristics showed typical curves for semiconductor p-n junctions. The spectral...

  • Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage. Jolley, Greg; Lu, Hao Feng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati // Applied Physics Letters;9/20/2010, Vol. 97 Issue 12, p123505 

    We report on a detailed analysis of the temperature dependent electrical properties of In0.5Ga0.5As/GaAs quantum dot solar cells. The effects leading to a reduction in the open circuit voltage are found to be the thermal injection of carriers from the n and p-type layers into the depletion...

  • Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor. Unni, K.; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel // Journal of Materials Science;Mar2006, Vol. 41 Issue 6, p1865 

    Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The...

  • Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade. Yu-Chiang Chao; Hung-Kuo Tsai; Hsiao-Wen Zan; Yung-Hsuan Hsu; Hsin-Fei Meng; Sheng-Fu Horng // Applied Physics Letters;5/30/2011, Vol. 98 Issue 22, p223303 

    In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 104. By investigating the influence of the device's geometric parameters on the transistor...

  • Response delay caused by dielectric relaxation of polymer insulators for organic transistors and resolution method. Suemori, Kouji; Kamata, Toshihide // Applied Physics Letters;8/20/2012, Vol. 101 Issue 8, p083307 

    We investigated the effect of dielectric relaxation in polymer gate insulators on the device characteristics of organic field effect transistors. Dielectric relaxation of polymer gate insulators caused an increase in drain current (ID) in a period starting immediately after the application of...

  • IMEC touts record GaAs solar cells conversion efficiency of 24.7% on Ge substrate. Mutschler, Ann Steffora // Electronic News;3/3/2008, Vol. 54 Issue 9, p6 

    The article reports that Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC has achieved a conversion efficiency of 24.7% for a single-junction GaAs solar cell on a Ge substrate in March 2008. IMEC noted that the GaAs solar cells are used in satellite solar panels and...

  • Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells. LaPierre, R. R. // Journal of Applied Physics;Feb2011, Vol. 109 Issue 3, p034311 

    Numerical simulation of current-voltage (J-V) characteristics of III-V nanowire core-shell p-n junction diodes under illuminated conditions is presented with an emphasis on optimizing the nanowire design for photoconversion efficiency. Surface recombination and depletion effects are found to...

  • MIT'S Technology Review Identifies 10 Technologies Set to Transform Our World.  // Biomedical Market Newsletter;4/28/2012, Vol. 21, p1 

    The article informs that Technology Review Inc. has released the annual list of the 10 emerging technologies with the greatest potential to transform our world. The top listed innovations include egg stem cells, ultra-efficient solar and light-field photography. The egg stem cells have are...

  • News in brief.  // Nature;12/14/2006, Vol. 444 Issue 7121, p802 

    The article offers news briefs related to technology. The American Council on Education conducted a survey and found that the cheap labor abroad is a threat to economic competitiveness in the U.S. Researches from the Institute of Cancer in Copenhagen found no evidence that mobile phones can...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics