Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Riester, S. W. E.; Stolichnov, I.; Trodahl, H. J.; Setter, N.; Rushforth, A. W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, T.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unambiguously signaled by a cusp in the temperature derivative of resistance. Polarization reversal in the ferroelectric copolymer polyvinylidene fluoride with trifluoroethylene P(VDF-TrFE) by voltage pulses of less than 10 V results in a reproducible nonvolatile shift in the cusp by as much as 7%–9%. The unique combination of a relatively large spontaneous polarization and low dielectric constant of the P(VDF-TrFE) gate promises a further reduction in the operation voltage.


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