Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors

Yu-Shyan Lin; Yu-Jeng Jou; Pin-Chun Huang
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
This work explores the thermal and bias stabilities of composite-collector double heterojunction bipolar transistors (CC-DHBTs) with i-InGaAs/n+-InP in the collector layer, in the temperature range of 300–400 K. Both V-shaped behaviors (observed in dc current gain β against collector current IC and in offset voltage VCE,offset against base current IB plot) of the asymmetric CC-DHBT are studied simultaneously. At high IC, the devices of interest improve the dc current gain temperature stability relative to most HBTs described in the literature. Additionally, unlike that of the abrupt DHBTs in the literature, the β of the CC-DHBTs is independent of VCB, revealing that the effect of the conduction-band barrier in the base-collector junctions may have been eliminated. An analytical expression for the variation in VCE,offset with IB has been developed. Additionally, unlike that of the unpassivated and SiNx-passivated devices, the β of the sulfur-treated device is fairly constant over five decades of IC. The difference among these variously treated devices is striking. X-ray photoelectron spectroscopy was adopted to examine InGaAs surfaces that were (NH4)2Sx and SiNx passivated. The results reveal that passivation effectively suppresses the oxidation of As.


Related Articles

  • High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. Makimoto, Toshiki; Yamauchi, Yoshiharu; Kumakura, Kazuhide // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1964 

    High-power characteristics have been investigated for GaN/InGaN double heterojunction bipolar transistors (HBTs) on SiC substrates. A base-collector diode showed a high breakdown voltage exceeding 50 V, which is ascribed to a wide band gap of a GaN collector. The maximum collector current is...

  • Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz. Hafez, Walid; Feng, Milton // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152101 

    Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μm2 HBT achieves excellent ƒT values of 604 GHz...

  • InAs-Based p-n Homojunction Diodes: Doping Effects and Impact of Doping on Device Parameters. Changhyun Yi; Tong-Ho Kim; Brown, April S. // Journal of Electronic Materials;Sep2006, Vol. 35 Issue 9, p1712 

    InAs heterojunction bipolar transistors (HBTs) are promising candidates for low power and high frequency (THz) device applications due to their small bandgap, high electron mobility, and high saturation drift velocity. However, doping limits such as the trade-off between desired low intentional...

  • Comparing the two processes.  // Electronic Design;05/03/99, Vol. 47 Issue 9, p40 

    Compares the technology of B7HF/C, a silicon-germanium bipolar process that has a transit frequency of 75 GHz with that of B6HF, a bipolar process with a transit frequency of 25 GHz. Speed; Collector-substrate capacitance; Power savings.

  • The Bipolar Transistor and Some New Designs. BIE, ALEX // Popular Electronics;Apr99, Vol. 16 Issue 4, p54 

    Presents information on the bipolar junction transistor, a semiconductor device that dates back to the discovery of the transistor. History of the transistor; Structure; How the transistor works.

  • Temperature and impact ionization effects on fT of advanced bipolar transistors. Yuan, J. S.; Yeh, C. S.; Gadepally, B. // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2402 

    Presents a study which developed cutoff frequency modeling of the advanced bipolar transistors at avalanche breakdown. Details on the analytical equations developed; Examination of the process sensitivity of the collector charging time at the avalanche breakdown regime; Results of the study.

  • High voltage pulse generation using current mode second breakdown in a bipolar junction transistor. Baker, R. J. // Review of Scientific Instruments;Apr91, Vol. 62 Issue 4, p1031 

    The characteristics of a bipolar junction transistor operating in the avalanche region and then triggered into current mode second breakdown are formulated. If the time the BJT is subjected to secondary breakdown is limited the BJT may be used as a nanosecond, high voltage switch without...

  • Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors. Han-Wei Chiang; Rode, Johann C.; Choudhary, Prateek; Rodwell, Mark J. W. // Journal of Applied Physics;2014, Vol. 116 Issue 16, p164509-1 

    As the dimensions of In0.53Ga0.47As/InP double-heterojunction bipolar transistors (DHBTs) scale for terahertz applications, the DC current (β) decreases. To improve the DC performance in such scaled devices, we analyze three modified HBT geometries: a HBT with a surface pulse-doped layer in...

  • High Frequency Property Optimization of Heterojunction Bipolar Transistors Using Geometric Programming. Yiming Li; Ying-Chieh Chen // AIP Conference Proceedings;12/26/2007, Vol. 963 Issue 2, p997 

    In this work, we theoretically optimize the high frequency property of silicon-germanium heterojunction bipolar transistors (HBTs) using a geometry programming (GP) technique. It is known that the base transit time of semiconductor devices potentially is a function of doping profile, device...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics