TITLE

Single crystal growth and formation of defects in deuterium-tritium layers for inertial confinement nuclear fusion

AUTHOR(S)
Chernov, A. A.; Kozioziemski, B. J.; Koch, J. A.; Atherton, L. J.; Johnson, M. A.; Hamza, A. V.; Kucheyev, S. O.; Lugten, J. B.; Mapoles, E. A.; Moody, J. D.; Salmonson, J. D.; Sater, J. D.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We identify vapor-etched grain boundary grooves on the solid-vapor interface as the main source of surface roughness in the deuterium-tritium (D–T) fuel layers, which are solidified and then cooled. Current inertial confinement fusion target designs impose stringent limits to the cross-sectional area and total volume of these grooves. Formation of these grain boundaries occurs over time scales of hours as the dislocation network anneals and is inevitable in a plastically deformed material. Therefore, either cooling on a much shorter time scale or a technique that requires no cooling after solidification should be used to minimize the roughness.
ACCESSION #
36609511

 

Related Articles

  • Surface Transition on Ice Induced by the Formation of a Grain Boundary. Pedersen, Christian; Mihranyan, Albert; Strømme, Maria // PLoS ONE;2011, Vol. 6 Issue 9, p1 

    Interfaces between individual ice crystals, usually referred to as grain boundaries, play an important part in many processes in nature. Grain boundary properties are, for example, governing the sintering processes in snow and ice which transform a snowpack into a glacier. In the case of snow...

  • Nucleation of misfit dislocations in In[sub 0.2]Ga[sub 0.8]As epilayers grown on GaAs substrates. Chen, Y.; Liliental-Weber, Z. // Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p499 

    Investigates the misfit dislocation arrays in In[sub 0.2]Ga[sub0.8]As epilayer grown on GaAs substrates. Determination of the glide plane of each misfit dislocation in InGaAs interfaces; Proportionality of the nucleation energy in glide force; Correlation between linear dislocation densities...

  • Graded-composition buffer layers using digital AlGaAsSb alloys. Fritz, I.J.; Dawson, L.R. // Applied Physics Letters;10/16/1995, Vol. 67 Issue 16, p2320 

    Investigates graded-composition buffer layers using digital AlGaAsSb alloys. Presence of superlattices in the buffers; Discovery of the existence of misfit-generated dislocations near the steps in pseudoalloy compositions; Value of the root-mead-square surface roughness.

  • Detailed implosion modeling of deuterium-tritium layered experiments on the National Ignition Facility. Clark, D. S.; Hinkel, D. E.; Eder, D. C.; Jones, O. S.; Haan, S. W.; Hammel, B. A.; Marinak, M. M.; Milovich, J. L.; Robey, H. F.; Suter, L. J.; Town, R. P. J. // Physics of Plasmas;May2013, Vol. 20 Issue 5, p056318 

    More than two dozen inertial confinement fusion ignition experiments with cryogenic deuterium-tritium layers have now been performed on the National Ignition Facility (NIF) [G. H. Miller et al., Opt. Eng. 443, 2841 (2004)]. Each of these yields a wealth of data including neutron yield, neutron...

  • A quantitative study of the effect of surface texture on plasticity induced surface roughness and dislocation density of crystalline materials. Zamiri, Amir R.; Pourboghrat, Farhang; Bieler, Thomas R. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 8, p084904 

    Microscale simulations are used to study the effects of the surface texture and plastic deformation on surface roughness and dislocation density, which are important parameters controlling some surface physical properties such as electron work function (EWF) and phonon emission of crystalline...

  • Finite multiplicative plasticity for small elastic strains with linear balance equations and grain boundary relaxation. Neff, Patrizio // Continuum Mechanics & Thermodynamics;Apr2003, Vol. 15 Issue 2, p161 

    This paper is concerned with the formulation of a phenomenological model of finite elastoplasticity valid for small elastic strains for initially isotropic polycrystalline material. As a basic we assume the multiplicative split F = Fe Fp of the deformation gradient into elastic and plastic part....

  • Dislocation-free InSb grown on GaAs compliant universal substrates. Ejeckam, F.E.; Seaford, M.L. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p776 

    Examines the formation of a dislocation-free indium antimonide (InSb) grown on an innovative compliant gallium arsenide (GaAs) substrates. Wafer bonding of GaAs layer to a bulk GaAs crystal; Absence of measurable threading dislocation on InSb films grown on compliant substrates; Accounts on the...

  • Effects of doping impurity and growth orientation on dislocation generation in GaAs crystals grown from the melt: A qualitative finite-element study. Zhu, X. A.; Tsai[a], C. T. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2295 

    Studies the effects of doping impurity and growth orientation on dislocation generation in gallium arsenide crystals grown from the melt. Dislocation density generated in the crystal; Influence of the growth orientation during the crystal growth process on the level of reduction; Generation of...

  • Transmission electron microscopy characterization of In[sub x]Ga[sub 1-x]As substrates grown.... McCaffrey, J.P.; Bryskiewicz, B.; Bryskiewicz, T.; Jiran, E. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2344 

    Examines the properties of In[sub x]Ga[sub 1-x]As ingots grown by liquid phase electroepitaxy on gallium arsenide substrates. Use of heteroepitaxial lateral overgrowth technique to cover the substrates with silicon dioxide layer; Decrease in dislocation densities in the alloy layer; Occurrence...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics