Narrow-band metal-oxide-semiconductor photodetector

Ho, W. S.; Lin, C.-H.; Cheng, T.-H.; Hsu, W. W.; Chen, Y.-Y.; Kuo, P.-S.; Liu, C. W.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
Si-based photodetectors for narrow-band ultraviolet light (319 nm) and green light (500 nm) detection are demonstrated using a metal-oxide-semiconductor tunneling structure. By using appropriate selection of gate metal, the metal-oxide-semiconductor tunneling diode can detect specific range of light. Due to the spectral dependence of absorption and reflection of the Ag and Au as gate electrodes, the narrow-band detection of ultraviolet and green light can be achieved, respectively. The photodetectors with 130 nm thick Ag gate and 70 nm thick Au gate exhibit peak responsivities of 5.1 and 0.3 mA/W at 319 and 500 nm, respectively.


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